MBR10100CT-E3/45 Vishay, MBR10100CT-E3/45 Datasheet

DIODE SCHOTT 10A 100V DUAL TO220

MBR10100CT-E3/45

Manufacturer Part Number
MBR10100CT-E3/45
Description
DIODE SCHOTT 10A 100V DUAL TO220
Manufacturer
Vishay
Datasheet

Specifications of MBR10100CT-E3/45

Voltage - Forward (vf) (max) @ If
850mV @ 5A
Current - Reverse Leakage @ Vr
100µA @ 100V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
5 A
Max Surge Current
120 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.85 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 89125
Revision: 26-Apr-10
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Non-repetitive avalanche energy
at T
Peak repetitive reverse current at t
T
Voltage rate of change (rated V
Operating junction and storage temperature range
J
= 38 °C ± 2 °C per diode
J
= 25 °C, L = 60 mH per diode
Dual Common-Cathode High Voltage Schottky Rectifier
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
F
PIN 1
PIN 3
TO-220AB
TMBS
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
R
)
p
C
®
= 2 µs, 1 kHz,
= 25 °C unless otherwise noted)
PIN 2
CASE
1
90 V, 100 V
2
2 x 5.0 A
150 °C
0.75 V
120 A
3
C
= 105 °C
total device
per diode
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
converters or polarity protection application
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder bath temperature 275 °C maximum, 10 s,
• Compliant to RoHS directive 2002/95/EC and in
per JESD 22-B106
accordance to WEEE 2002/96/EC
SYMBOL
T
V
J
V
I
dV/dt
I
I
V
, T
F(AV)
E
RRM
FSM
RWM
RRM
DC
AS
MBR1090CT, MBR10100CT
STG
DiodesEurope@vishay.com
supplies,
Vishay General Semiconductor
MBR1090CT
90
90
90
freewheeling
- 65 to + 150
10 000
120
5.0
0.5
10
60
MBR10100CT
100
100
100
diodes,
www.vishay.com
UNIT
V/µs
dc-to-dc
mJ
°C
V
V
V
A
A
A
1

Related parts for MBR10100CT-E3/45

MBR10100CT-E3/45 Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 89125 For technical questions within your region, please contact one of the following: Revision: 26-Apr-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, MBR1090CT, MBR10100CT FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • ...

Page 2

... MBR1090CT, MBR10100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage per diode Maximum reverse current per diode at working peak (2) reverse voltage Notes (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ...

Page 3

... Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Reverse Characteristics Per Diode Document Number: 89125 For technical questions within your region, please contact one of the following: Revision: 26-Apr-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, MBR1090CT, MBR10100CT 10 000 D = 1.0 1000 T 100 0.1 Figure 6. Typical Junction Capacitance Per Diode 10 0 ...

Page 4

... MBR1090CT, MBR10100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) www.vishay.com For technical questions within your region, please contact one of the following: 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, TO-220AB ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords