BAV199LT1 ON Semiconductor, BAV199LT1 Datasheet
BAV199LT1
Manufacturer Part Number
BAV199LT1
Description
DIODE SWITCH DUAL 70V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.BAV199LT1.pdf
(3 pages)
Specifications of BAV199LT1
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5nA @ 70V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
3µs
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BAV199LT1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV199LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BAV199LT1G
Manufacturer:
LITTLEFUSE
Quantity:
12 000
Company:
Part Number:
BAV199LT1G
Manufacturer:
ON
Quantity:
90 000
Company:
Part Number:
BAV199LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAV199LT1G
Manufacturer:
ONSEMI
Quantity:
20 000
Part Number:
BAV199LT1G / BAV199
Manufacturer:
ON/安森美
Quantity:
20 000
BAV199LT1G
Dual Series Switching
Diode
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
(Note 1)
(Averaged Over Any 20 ms Period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
Total Device Dissipation
FR−5 Board (Note 1), T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2), T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
Low Leakage Current Applications
Medium Speed Switching Times
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
Characteristic
Rating
A
= 25°C
A
= 25°C
I
Symbol
Symbol
FM(surge)
T
V
I
R
R
I
I
J
F(AV)
FRM
FSM
V
RRM
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−65 to +150
Value
Max
215
500
715
450
225
556
300
417
2.0
1.0
0.5
1.8
2.4
70
70
1
mW/°C
mW/°C
mAdc
mAdc
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Adc
mW
mW
°C
†For information on tape and reel specifications,
BAV199LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ANODE
ORDERING INFORMATION
1
JY = Specific Device Code
M = Date Code*
G
MARKING DIAGRAM
http://onsemi.com
CATHODE/ANODE
= Pb−Free Package
(Pb−Free)
Package
SOT−23
1
CASE 318
STYLE 11
SOT−23
JY M G
3
Publication Order Number:
2
G
3
3000/Tape & Reel
CATHODE
Shipping
BAV199LT1/D
2
†
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BAV199LT1 Summary of contents
Page 1
... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3000/Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV199LT1/D † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 mAdc) (BR) Reverse Voltage Leakage Current ( Vdc Vdc 150° Diode Capacitance ( 1.0 ...
Page 3
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAV199LT1/D ...