BAV70LT1 ON Semiconductor, BAV70LT1 Datasheet
BAV70LT1
Manufacturer Part Number
BAV70LT1
Description
DIODE SWITCH DUAL CC 70V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.BAV70LT3G.pdf
(4 pages)
Specifications of BAV70LT1
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BAV70LT1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV70LT1
Manufacturer:
ON
Quantity:
1 485
Company:
Part Number:
BAV70LT1
Manufacturer:
ON
Quantity:
2 500
Company:
Part Number:
BAV70LT1
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
BAV70LT1
Manufacturer:
CITIZEN
Quantity:
4 589
Part Number:
BAV70LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BAV70LT1G
Manufacturer:
ON Semiconductor
Quantity:
77 992
Part Number:
BAV70LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
BAV70LT1G
Dual Switching Diode
Common Cathode
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation FR− 5 Board
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1)
T
Derate above 25°C
Junction−to−Ambient
Alumina Substrate,
(Note 2) T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Characteristic
A
= 25°C
Rating
(EACH DIODE)
I
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−55 to
Value
+150
Max
200
500
225
556
300
417
1.8
2.4
70
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
mW
mW
mA
mA
°C
V
†For information on tape and reel specifications,
BAV70LT1G
BAV70LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
CATHODE
ORDERING INFORMATION
2
3
MARKING DIAGRAM
A4 = Device Code
M
G
http://onsemi.com
(Pb−Free)
(Pb−Free)
3
Package
1
SOT−23
SOT−23
= Date Code*
= Pb−Free Package
A4 M G
Publication Order Number:
G
SOT−23 (TO−236)
10,000 / Tape & Reel
CASE 318
3000 / Tape & Reel
STYLE 9
ANODE
ANODE
Shipping
1
2
BAV70LT1/D
†
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BAV70LT1 Summary of contents
Page 1
... ORDERING INFORMATION Device Package Shipping SOT−23 3000 / Tape & Reel (Pb−Free) SOT−23 10,000 / Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV70LT1/D † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage Reverse Voltage Leakage Current (Note 3) Diode Capacitance Forward Voltage Reverse Recovery Time ( mA 1.0 mA) (Figure R(REC) 3. For each individual diode while ...
Page 3
T = 85° 125° 55° 25° 150°C A 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0 FORWARD VOLTAGE (V) F Figure 2. Forward ...
Page 4
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAV70LT1/D ...