BAS21SLT1 ON Semiconductor, BAS21SLT1 Datasheet

DIODE SWITCH DUAL 250V SOT23

BAS21SLT1

Manufacturer Part Number
BAS21SLT1
Description
DIODE SWITCH DUAL 250V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAS21SLT1

Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 200V
Current - Average Rectified (io) (per Diode)
225mA (DC)
Voltage - Dc Reverse (vr) (max)
250V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BAS21SLT1OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS21SLT1
Manufacturer:
AVAGO
Quantity:
3 806
Part Number:
BAS21SLT1G
Manufacturer:
ON
Quantity:
300 000
Part Number:
BAS21SLT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAS21SLT1G
Manufacturer:
ON
Quantity:
1 437
Part Number:
BAS21SLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
BAS21SLT1G
Manufacturer:
ON
Quantity:
12 898
Company:
Part Number:
BAS21SLT1G
Quantity:
198 000
BAS21SLT1G
Dual Series High Voltage
Switching Diode
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
THERMAL CHARACTERISTICS
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Total Device Dissipation FR− 5 Board
(Note 1)
T
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature Range
A
A
ESD Rating
Compliant
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: Class 1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
= 25°C
= 25°C
Characteristic
− Machine Model: Class B
Rating
I
Symbol
Symbol
FM(surge)
T
V
R
R
J
V
RRM
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−55 to
Value
+150
Max
250
250
225
625
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
BAS21SLT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ANODE
ORDERING INFORMATION
1
MARKING DIAGRAM
JT = Device Code
M
G
http://onsemi.com
CATHODE/ANODE
1
1
(Pb−Free)
= Date Code*
= Pb−Free Package
Package
SOT−23
CASE 318
STYLE 11
SOT−23
JT M G
2
3
Publication Order Number:
G
3
3000/Tape & Reel
CATHODE
Shipping
BAS21SLT1/D
2

Related parts for BAS21SLT1

BAS21SLT1 Summary of contents

Page 1

... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAS21SLT1G SOT−23 3000/Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAS21SLT1/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (V = 200 Vdc 200 Vdc 150° Reverse Breakdown Voltage (I = 100 mAdc) BR Forward Voltage (I = 100 mAdc ...

Page 3

... ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BAS21SLT1/D ...

Related keywords