1SS383T1G ON Semiconductor, 1SS383T1G Datasheet

1SS383T1G

Manufacturer Part Number

1SS383T1G

Description

DIODE SCHOTTKY DUAL 40V SC82

Manufacturer

ON Semiconductor

Datasheet

1.1SS383T1G.pdf (2 pages)

Specifications of 1SS383T1G

Voltage - Forward (vf) (max) @ If

600mV @ 100mA

Current - Reverse Leakage @ Vr

5µA @ 40V

Current - Average Rectified (io) (per Diode)

300mA (DC)

Voltage - Dc Reverse (vr) (max)

40V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

2 Independent

Mounting Type

Surface Mount

Package / Case

SC-70-4, SC-82-4, SOT-323-4, SOT-343

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Other names

1SS383T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

1SS383T1G

Manufacturer:

Quantity:

50 700

Current page: 1 of 2
Download datasheet (38Kb)

1SS383T1G

Dual Schottky Diode

package.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*Both Devices Active

1. FR−4 @ Minimum Pad.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

March, 2006 − Rev. 2

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Continuous Reverse Voltage

Maximum Peak Forward Current*

Peak Forward Surge Current

Pulse Width = 10 ms

Total Device Dissipation

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Junction and Storage

Temperature

Forward Voltage

Reverse Current

Capacitance

Dual 40 V, 300 mA Low V

Low Forward Voltage: V

Low Reverse Current: I

This is a Pb−Free Device*

= 25°C

(Both Junctions Heated)

= 1.0 mA)

= 10 mA)

= 100 mA)

= 40 V)

= 0, f = 1.0 MHz)

Characteristic

Rating

= 25°C)

Preferred Device

= 5 mA (max)

= 0.48 V (typ) @ I

Symbol

FM(surge)

Schottky Diodes in 4−lead SC−82

, T

qJA

stg

= 25°C unless otherwise noted)

Min

−

−55 to +150

(Note 1)

Max

Typ

300

500

200

625

280

360

540

= 100 mA

1.6

−

Max

600

−

mW/°C

°C/W

Unit

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

1SS383T1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

AE = Specific Device Code

M = Date Code

G = Pb−Free Package

MARKING DIAGRAM

http://onsemi.com

Package

(Pb−Free)

CASE 900AA

SC−82

Publication Order Number:

3000/Tape & Reel

Shipping

1SS383T1G/D

†

Related parts for 1SS383T1G

1SS383T1G Summary of contents

Page 1

... Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 1SS383T1G/D † ...

... BSC 0.051 BSC 2.10 2.20 0.079 0.083 0.087 0.20 0.30 0.004 0.008 0.012 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 1SS383T1G/D ...

Related keywords

1ss383
1SS383T1G datasheet
1SS383T1G data sheet
1SS383T1G pdf datasheet
1SS383T1G component
1SS383T1G part
1SS383T1G distributor
1SS383T1G RoHS
1SS383T1G datasheet download

1SS383T1G ON Semiconductor, 1SS383T1G Datasheet

1SS383T1G

Specifications of 1SS383T1G

Available stocks

Related parts for 1SS383T1G

1SS383T1G Summary of contents

Page 1

Page 2

Related keywords