1N5818 Fairchild Semiconductor, 1N5818 Datasheet

DIODE SCHOTTKY 30V 1A DO-41

1N5818

Manufacturer Part Number
1N5818
Description
DIODE SCHOTTKY 30V 1A DO-41
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 1N5818

Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
110pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A @ Ta=90C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
1A
Forward Voltage Vf Max
875mV
Forward Surge Current Ifsm Max
25A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5818
1N5818FSTR

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1N5817 - 1N5819 Rev. C2
© 2010 Fairchild Semiconductor Corporation
1N5817 - 1N5819
Schottky Barrier Rectifier
Features
• 1.0 ampere operation at T
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
Absolute Maximum Ratings*
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
* Mounted on Cu-pad Size 5mm x 5mm on PCB
Electrical Characteristics
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Symbol
Symbol
Symbol
T
V
J,
I
R
R
I
F(AV)
FSM
P
RRM
V
C
I
T
θJA
θJC
R
D
F
T
STG
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
Power Dissipation
Maximum Thermal Resistance, Junction to Ambient
Maximum Thermal Resistance, Junction to Case
Forward Voltage
Reverse Current @ rated V
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
A
= 90°C with no thermal runaway.
(per diode)
Parameter
Parameter
Parameter
.375” lead length @ T
8.3 ms Single Half-Sine Wave
T
R
A
= 25°C unless otherwise noted
COLOR BAND DENOTES CATHODE
DO-41 plastic case
@ 1.0 A
@ 3.0 A
T
T
C
C
= 25 °C
= 100 °C
1
A
= 90°C
1N5817
1N5817
450
750
20
-65 to +125
1N5818
1N5818
Value
Value
Value
1.25
100
550
875
110
1.0
0.5
30
25
45
10
1N5819
1N5819
600
900
40
November 2010
www.fairchildsemi.com
Units
Units
Units
°C/W
°C/W
mV
mV
mA
mA
°C
pF
W
V
A
A

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1N5818 Summary of contents

Page 1

... Single Half-Sine Wave Parameter (per diode) Parameter @ 1 3 ° 100 ° November 2010 Value Units 1N5817 1N5818 1N5819 1.0 25 -65 to +125 Value Units 1.25 100 45 Value Units 1N5817 1N5818 1N5819 450 550 600 750 875 900 0.5 10 110 www.fairchildsemi.com °C W °C/W °C ...

Page 2

... Rev 100 120 140 0.1 0.2 Figure 2. Forward Voltage Characteristics 400 200 100 100 0.1 2 1N5817 1N5819 1N5818 º Pulse Width = 300μ μ μ μ Duty Cycle 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Forward Voltage, V [V] F º 0 100 ...

Page 3

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...

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