ZHCS500TA Diodes Zetex, ZHCS500TA Datasheet

DIODE SCHOTTKY 40V 0.5A SOT23-3

ZHCS500TA

Manufacturer Part Number
ZHCS500TA
Description
DIODE SCHOTTKY 40V 0.5A SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZHCS500TA

Voltage - Forward (vf) (max) @ If
550mV @ 500mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
500mA (DC)
Current - Reverse Leakage @ Vr
40µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
10ns
Capacitance @ Vr, F
20pF @ 25V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
40V
Avg. Forward Curr (max)
1A
Rev Curr
40uA
Peak Non-repetitive Surge Current (max)
6.75A
Forward Voltage
1.05V
Operating Temp Range
-55C to 125C
Package Type
SOT-23
Rev Recov Time
10ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZHCS500TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZHCS500TA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Company:
Part Number:
ZHCS500TA
Quantity:
4 092
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- September 1997
FEATURES:
APPLICATIONS:
PARTMARK DETAIL: ZS5
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width= 300 s; duty cycle 2% .
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t 100 s
Power Dissipation at T
Storage Temperature Range
Junction Temperature
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery
Time
Low V
High Current Capability
DC - DC converters
Mobile telecomms
PCMCIA
F
F
= 500mA
amb
SYMBOL
V
V
I
C
t
R
rr
(BR)R
F
D
= 25° C
t 10ms
MIN.
40
TYP.
60
270
300
370
465
550
640
810
440
15
20
10
amb
I
SYMBOL
V
I
V
I
P
T
T
F
FAV
FSM
tot
stg
j
R
F
= 25° C unless otherwise stated).
MAX.
300
350
460
550
670
780
1050
40
UNIT
V
mV
mV
mV
mV
mV
mV
mV
mV
pF
ns
A
1
3
-55 to + 150
CONDITIONS.
I
I
I
I
I
I
I
I
I
V
f= 1MHz,V
switched from
I
Measured at I
R
F
F
F
F
F
F
F
F
F
VALUE
= 50mA*
= 100mA*
= 250mA*
= 500mA*
= 750mA*
= 1000mA*
= 1500mA*
= 500mA, T
= 200 A
R
= 500mA to I
1000
= 30V
6.75
500
550
330
125
40
3
C
1
ZHCS500
R
= 25V
SOT23
R
amb
= 50mA
R
= 100° C*
= 500mA
UNIT
mW
mA
mV
mA
° C
° C
V
A
A
A
3
2

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ZHCS500TA Summary of contents

Page 1

SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- September 1997 FEATURES: Low V F High Current Capability APPLICATIONS converters Mobile telecomms PCMCIA PARTMARK DETAIL: ZS5 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) ...

Page 2

ZHCS500 TYPICAL CHARACTERISTICS 1 100m 10m 1m 0 0.1 0.2 0 Forward Voltage ( 0.6 DC D=0.5 0.4 D=0.2 0.2 D=0.1 D=0.05 0 100 105 110 115 T - Case Temperature (°C) ...

Page 3

TYPICAL CHARACTERISTICS 300 200 D=0.5 100 D=0.2 D=0.1 D=0.05 0 100u 1m 10m 100m Pulse Width (s) ZHCS500 Single Pulse 1 10 100 ...

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