ZHCS1000TA Diodes Zetex, ZHCS1000TA Datasheet

ZHCS1000TA

Manufacturer Part Number

ZHCS1000TA

Description

DIODE SCHOTTKY 40V 1.0A SOT23-3

Manufacturer

Diodes Zetex

Datasheet

1.ZHCS1000TA.pdf (3 pages)

Specifications of ZHCS1000TA

Voltage - Forward (vf) (max) @ If

500mV @ 1A

Voltage - Dc Reverse (vr) (max)

40V

Current - Average Rectified (io)

1A (DC)

Current - Reverse Leakage @ Vr

100µA @ 30V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

12ns

Capacitance @ Vr, F

25pF @ 25V, 1MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Rectifier Type

Schottky Diode

Configuration

Single

Peak Rep Rev Volt

40V

Avg. Forward Curr (max)

1.75

Rev Curr

100uA

Peak Non-repetitive Surge Current (max)

12A

Forward Voltage

0.6V

Operating Temp Range

-55C to 125C

Package Type

SOT-23

Rev Recov Time

12ns

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

ZHCS1000TR

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Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

ZHCS1000TA

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M/A-COM

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3 000

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Part Number:

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Manufacturer:

ZETEX

Quantity:

Company:

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Part Number:

ZHCS1000TA

Manufacturer:

DIODES

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

ZHCS1000TA

Manufacturer:

DIODES/美台

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20 000

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H&T Electronics

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ZHCS1000TA

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H&T Electronics

Part Number:

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Quantity:

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Current page: 1 of 3
Download datasheet (169Kb)

SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE ”SuperBAT”

ISSUE 2 - OCTOBER 1997

FEATURES:

APPLICATIONS:

PARTMARKING DETAILS : ZS1

ABSOLUTE MAXIMUM RATINGS.

ELECTRICAL CHARACTERISTICS (at T

*Measured under pulsed conditions. Pulse width= 300 s. Duty cycle 2%

PARAMETER

Continuous Reverse Voltage

Forward Current

Forward Voltage @ I

Average Peak Forward Current;D.C.= 50%

Non Repetitive Forward Current t 100 s

Power Dissipation at T

Storage Temperature Range

Junction Temperature

PARAMETER

Reverse Breakdown

Voltage

Forward Voltage

Reverse Current

Diode Capacitance

Reverse Recovery

Time

High current capability

Low V

Mobile telecomms, PCMIA & SCSI

DC-DC Conversion

= 1000mA(typ)

amb

SYMBOL

= 25° C

(BR)R

t 10ms

MIN.

amb

SYMBOL

FAV

FSM

tot

stg

= 25° C unless otherwise stated).

TYP.

240

265

305

355

390

425

495

420

MAX.

270

290

340

400

450

500

600

—

100

-55 to + 150

UNIT

VALUE

1000

1750

425

500

125

5.2

ZHCS1000

CONDITIONS.

f= 1MHz,V

switched from

500mA

Measured at I

= 50mA*

= 100mA*

= 250mA*

= 500mA*

= 750mA*

= 1000mA*

= 1500mA*

= 1000mA,T

= 300 A

= 500mA to I

= 30V

SOT23

= 25V

UNIT

° C

= 50mA

= 100° C

Related parts for ZHCS1000TA

ZHCS1000TA Summary of contents

Page 1

SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 2 - OCTOBER 1997 FEATURES: High current capability Low V F APPLICATIONS: Mobile telecomms, PCMIA & SCSI DC-DC Conversion PARTMARKING DETAILS : ZS1 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward ...

Page 2

ZHCS1000 10 1 100m 10m 1m 0 0.1 0.2 0 Forward Voltage ( 0.8 Typical DC 0.6 D=0.5 D=0.2 0.4 D=0.1 0.2 D=0. Case Temperature (°C) I F(av) ...

Page 3

MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. TYPICAL CHARACTERISTICS ZHCS1000 ...

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