ZHCS1006TA Diodes Zetex, ZHCS1006TA Datasheet
ZHCS1006TA
Manufacturer Part Number
ZHCS1006TA
Description
DIODE SCHOTTKY 60V 1.0A SOT23-3
Manufacturer
Diodes Zetex
Datasheet
1.ZHCS1006TA.pdf
(3 pages)
Specifications of ZHCS1006TA
Voltage - Forward (vf) (max) @ If
530mV @ 750mA
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
900mA (DC)
Current - Reverse Leakage @ Vr
100µA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
12ns
Capacitance @ Vr, F
17pF @ 25V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZHCS1006TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZHCS1006TA
Manufacturer:
ZETEX
Quantity:
20 000
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 1 - NOVEMBER 1997
FEATURES:
APPLICATIONS:
PARTMARKING DETAILS : S16
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width= 300 s. Duty cycle 2%
PARAMETER
Continuous Reverse Voltage
Forward Current
Forward Voltage @ I
Average Peak Forward Current;D.C.= 50%
Non Repetitive Forward Current t 100 s
Power Dissipation at T
Storage Temperature Range
Junction Temperature
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery
Time
High current capability
Low V
Mobile telecomms, PCMIA & SCSI
DC-DC Conversion
F
F
= 1000mA(typ)
amb
SYMBOL
V
V
I
C
t
R
= 25° C
rr
D
(BR)R
F
t 10ms
MIN.
60
amb
SYMBOL
I
V
I
I
P
T
T
V
F
FAV
FSM
tot
stg
j
R
F
= 25° C unless otherwise stated).
TYP.
80
245
275
330
395
455
510
620
50
17
12
MAX.
280
320
390
470
530
600
740
100
1
3
-55 to + 150
UNIT
V
mV
mV
mV
mV
mV
mV
mV
pF
ns
A
VALUE
1600
900
600
500
125
60
12
ZHCS1006
5
C
1
CONDITIONS.
I
I
I
I
I
I
I
I
V
f= 1MHz,V
switched from
I
500mA
Measured at I
F
R
F
F
F
F
F
F
F
= 50mA*
= 100mA*
= 250mA*
= 500mA*
= 750mA*
= 1000mA*
= 1500mA*
= 300 A
R
= 500mA to I
= 45V
SOT23
R
= 25V
UNIT
R
mW
mA
mV
mA
° C
° C
= 50mA
V
A
A
A
3
R
=
2
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ZHCS1006TA Summary of contents
Page 1
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 1 - NOVEMBER 1997 FEATURES: High current capability Low V F APPLICATIONS: Mobile telecomms, PCMIA & SCSI DC-DC Conversion PARTMARKING DETAILS : S16 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward ...
Page 2
ZHCS1006 TYPICAL CHARACTERISTICS 10 1 100m 10m 1m 0 0.1 0.2 0 Forward Voltage ( 0.8 DC Typical D=0.5 Tj=125°C 0.6 D=0.2 0.4 D=0.1 D=0.05 0 Case ...
Page 3
MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. TYPICAL CHARACTERISTICS ZHCS1006 ...