RB521G-30T2R Rohm Semiconductor, RB521G-30T2R Datasheet
RB521G-30T2R
Specifications of RB521G-30T2R
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RB521G-30T2R Summary of contents
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... Limits Symbol FSM Tj -40 to +125 Tstg Min. Typ. Max 0. RB521G-30 Land size figure (Unit : mm) 0.5 0.13±0.03 VMD2 Structure φ1.5+0.1 0 φ0.5 4±0.1 2±0.05 Unit 30 V 100 mA 500 mA ℃ 125 ℃ Conditions Unit V I =10mA ...
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... AVE:2.017uA DISPERSION MAP 10 Ifsm 8.3ms 8.3ms 1cyc NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.1 0.08 D=1/2 0.06 Sin(θ＝180) 0.04 0. 0.1 1000 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS RB521G-30 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:17.34pF DISPERSION MAP 10 Ifsm 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0 ...
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... D=t/T 0.2 VR=15V DC Tj=125℃ T D=1/2 0.1 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta Tj=125℃ D=1/2 0.1 Sin(θ＝180 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) RB521G- D=t/T VR=15V 125 Rev.A 3/3 ...
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