1SS133T-77 Rohm Semiconductor, 1SS133T-77 Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Single 1SS133T-77
Manufacturer Part Number
1SS133T-77
Description
DIODE 80V 130MA DO-34
Manufacturer
Rohm Semiconductor
Specifications of 1SS133T-77
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Voltage - Dc Reverse (vr) (max)
80V
Current - Average Rectified (io)
130mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0.5V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AG, DO-34, Axial
Forward Current If(av)
130mA
Repetitive Reverse Voltage Vrrm Max
90V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
600mA
Diode
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
90 V
Forward Continuous Current
0.4 A
Max Surge Current
0.6 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Diodes
Switching diode
1SS133
High speed switching
1) Glass sealed envelope. (MSD)
2) High reliability.
Silicon epitaxial planar
F
Re
C
Reverse recovery time
Re
Re
F
Av
Su
Po
Ju
Stor
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
orward voltage (repetitive peak)
orward voltage
apacitance between terminal
nction temperature
erage rectified forward current
rge current (1s)
wer dissipation
verse current
verse voltage (repetitive peak)
verse voltage (DC)
age temperature
Parameter
Parameter
Symbol
Symbol
Tstg
I
V
surge
Trr
I
V
V
Ct
Io
Tj
I
FM
P
RM
R
R
F
JEDEC : DO-34
External dimensions (Unit : mm)
Taping specifications (Unit : mm)
ROHM : MSD
H2
H1
CATHODE BAND (YELLOW)
Min.
-
-
-
-
-65 to 175
Limits
291
BLUE
400
130
600
300
175
Typ.
90
80
L1
-
-
-
-
A
Max.
4.0
1.2
0.5
2
F
E
L2
2.70.3
Unit
m
Unit
mA
mA
mA
µA
℃
℃
pF
ns
V
V
V
W
I
V
V
V
F
=100mA
R
R
R
C
=80V
=0.5V , f=1MHz
=6V,I
BROWN
B
D
F
=10mA,RL=50Ω,Irr=1/10 I
291
φ0.40.1
＊H1(6mm)：BROWN
|L1-L2|
Symbol
Conditions
H1
H2
Ａ
B
C
D
E
Ｆ
Rev.C
T-72
T-77
T-72
T-77
T-72
T-77
T-72
T-77
T-72
T-77
T-72
T-77
T-72
T-77
T-72
T-77
T-72
T-77
Standard dimension
value(mm)
1SS133
52.4±1.5
26.0
5.0±0.5
5.0±0.3
1.0 max.
1/2A±1.2
1/2A±0.4
0.7 max.
0.2 max.
6.0±0.5
5.0±0.5
1.5 max.
0.4 max.
φ1.80.2
0
+0.4
0
1/3
R
Related parts for 1SS133T-77
1SS133T-77 Summary of contents
Diodes Switching diode 1SS133 Applications High speed switching Features 1) Glass sealed envelope. (MSD) 2) High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Symbol Re verse voltage (repetitive peak) Re verse voltage (DC) F orward voltage (repetitive ...
Diodes Electrical characteristics curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ Ta=25℃ 10 Ta=-25℃ Ta=175℃ 1 0.1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 950 Ta=25℃ IF=100mA 940 n=30pcs 930 920 AVE:925.7mV 910 900 VF DISPERSION MAP 20 1cyc Ifsm ...
Diodes 0.20 DC 0.15 D=1/2 0. 0.05 t D=t/T Sin(θ＝180) VR=40V Tj=175℃ 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0.20 DC 0.15 D=1 Sin(θ＝180) t ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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