1N5819 STMicroelectronics, 1N5819 Datasheet

DIODE SCHOTTKY 40V 1A DO-41

1N5819

Manufacturer Part Number
1N5819
Description
DIODE SCHOTTKY 40V 1A DO-41
Manufacturer
STMicroelectronics
Datasheets

Specifications of 1N5819

Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
+ 150 C
Mounting Style
Through Hole
Current, Forward
1 A
Current, Surge
25 A
Package Type
DO-41
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Voltage, Forward
0.36 V
Voltage, Reverse
40 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5819
497-6610-2
497-6610-2
497-6610-3

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MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
n
n
n
n
n
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO41 these devices
are intended for use in low voltage, high frequency
inverters, free wheeling, polarity protection and
small battery chargers.
ABSOLUTE RATINGS (limiting values)
* :
July 2003 - Ed: 4A
Symbol
I
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
F(AV)
T
dPtot
FSM
RRM
ARM
Tj
dTj
stg
V
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward
current
Repetitive peak avalanche
power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
T
j
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
Parameter
150°C
0.45 V
40 V
1 A
T
tp = 10 ms
Sinusoidal
tp = 1µs Tj = 25°C
L
= 0.5
= 125°C
1N5817 1N5818 1N5819
1200
20
- 65 to + 150
DO41
10000
Value
1200
150
30
10
25
1
900
1N581x
40
Unit
V/µs
°C
°C
W
V
A
A
A
1/5

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1N5819 Summary of contents

Page 1

... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed 150°C 0.45 V Parameter T = 125° 0 Sinusoidal tp = 1µ 25°C 1N581x DO41 Value 1N5817 1N5818 1N5819 1200 1200 900 - 150 150 10000 Unit °C °C V/µs 1/5 ...

Page 2

... T 0.1 =tp/T tp 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig. 2-2: Average forward current versus ambient temperature ( =0.5) (1N5819). IF(av)(A) 1.2 1.0 0.8 0.6 0.4 0.2 =tp/T 0.0 0 100 125 ...

Page 3

... Fig. 4: Normalized avalanche power derating versus junction temperature. P ARM p P ARM 1.2 1 0.8 0.6 0.4 0 100 1000 Fig. 5-2: current versus overload duration (maximum values) (1N5819). IM( Ta=25°C 4 Ta=75°C 3 Ta=100° 1E-1 1E+0 1E-3 Fig. 7: Junction capacitance versus reverse voltage applied (typical values) ...

Page 4

... Fig. 10: Non repetitive surge peak forward current versus number of cycles. IFSM( Number of cycles 4/5 Fig. 8-2: Reverse leakage current versus reverse voltage applied (typical values) (1N5819). IR(mA) 1E+1 1N5818 1E+0 1E-1 1E-2 1E Fig. 9-2: Forward voltage drop versus forward current (typical values) (1N5819). IFM(A) 10 ...

Page 5

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...

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