STPS10L25G-TR STMicroelectronics, STPS10L25G-TR Datasheet

DIODE SCHOTTKY 25V 10A D2PAK

STPS10L25G-TR

Manufacturer Part Number
STPS10L25G-TR
Description
DIODE SCHOTTKY 25V 10A D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS10L25G-TR

Voltage - Forward (vf) (max) @ If
460mV @ 10A
Voltage - Dc Reverse (vr) (max)
25V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
800µA @ 25V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Rectifiers
Peak Reverse Voltage
25 V
Forward Continuous Current
10 A
Max Surge Current
200 A
Configuration
Single
Forward Voltage Drop
0.55 V at 20 A
Maximum Reverse Leakage Current
800 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5134-2

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Part Number:
STPS10L25G-TR
Manufacturer:
ST
0
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters.
This device is especially intended for use as a
rectifier at the secondary of 3.3V SMPS units.
* :
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
n
n
n
ABSOLUTE RATINGS (limiting values)
July 2003 - Ed : 4B
Symbol
I
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
OPTIMIZED
LOSSES TRADE-OFF WHICH MEANS THE
HIGHEST EFFICIENCY IN THE APPLICA-
TIONS
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
I
F(AV)
T
dPtot
RRM
RSM
FSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j
(
CONDUCTION
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
150 °C
0.35 V
10 A
25 V
/
Parameter
REVERSE
Tc = 140°C
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
STPS10L25D
TO-220AC
= 0.5
STPS10L25D/G
K
A
- 65 to + 150
10000
Value
5500
200
150
STPS10L25G
25
30
10
K
1
3
D
2
PAK
NC
A
Unit
V/µs
°C
W
V
A
A
A
A
A
C
1/5

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STPS10L25G-TR Summary of contents

Page 1

... Rth July 2003 - 150 °C 0. REVERSE TO-220AC STPS10L25D Parameter Tc = 140° Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS10L25D PAK STPS10L25G Value 0.5 10 200 1 3 5500 - 150 150 10000 A Unit °C V/µs 1/5 ...

Page 2

STPS10L25D/G THERMAL RESISTANCE Symbol R Junction to case th (j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions I * Reverse leakage current Forward voltage drop F Pulse test 380 µs, < evaluate the ...

Page 3

... Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) 5.0 1.0 0 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS10L25G only) Rth(j-a) (°C/ STPS10L25D/G = 0.5 = 0.2 = 0.1 ...

Page 4

STPS10L25D/G PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 8.90 4/5 REF ...

Page 5

... Marking STPS10L25D STPS10L25D STPS10L25G STPS10L25G STPS10L25G-TR STPS10L25G Epoxy meets UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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