SMBD914E6327 Infineon Technologies, SMBD914E6327 Datasheet
SMBD914E6327
Manufacturer Part Number
SMBD914E6327
Description
DIODE SWITCHING 75V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.MMBD914LT1.pdf
(4 pages)
Specifications of SMBD914E6327
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 75V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SMBD914
SMBD914E6327XT
SMBD914INTR
SMBD914XTINTR
SMBD914XTINTR
SP000010209
SMBD914E6327XT
SMBD914INTR
SMBD914XTINTR
SMBD914XTINTR
SP000010209
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SMBD914E6327
Manufacturer:
RENESAS
Quantity:
2 843
Part Number:
SMBD914E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Silicon Switching Diode
Type
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
SMBD914/ MMBD914
Junction - soldering point
1 For calculation of R
For high-speed switching applications
thJA
please refer to Application Note Thermal Resistance
S
1)
= 54 °C
Marking
s5D
s
1 = A
1
Pin Configuration
Symbol
V
V
I
I
P
T
T
R
F
FS
j
stg
R
RM
tot
thJS
2 n.c.
3 = C
SMBD914/ MMBD914
1
-65 ... 150
3
Value
100
250
370
150
4.5
75
260
Package
SOT23
1
Feb-18-2002
EHA07002
VPS05161
3
Unit
V
mA
mW
°C
K/W
2
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