DIODE ULTRAFAST HI COND SOT-23

MMBD914

Manufacturer Part NumberMMBD914
DescriptionDIODE ULTRAFAST HI COND SOT-23
ManufacturerFairchild Semiconductor
MMBD914 datasheet
Product Change Notification
 


Specifications of MMBD914

Voltage - Forward (vf) (max) @ If1V @ 10mAVoltage - Dc Reverse (vr) (max)100V
Current - Average Rectified (io)200mACurrent - Reverse Leakage @ Vr5µA @ 75V
Diode TypeStandardSpeedSmall Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)4nsCapacitance @ Vr, F4pF @ 0V, 1MHz
Mounting TypeSurface MountPackage / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
ProductUltra Fast Recovery RectifierConfigurationSingle
Reverse Voltage100 VForward Voltage Drop1 V @ 0.01 A
Recovery Time4 nsForward Continuous Current0.2 A
Max Surge Current2 AReverse Current Ir5 uA @ 75 V
Power Dissipation0.35 WMounting StyleSMD/SMT
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesMMBD914FSTR
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3
2
1
SOT-23
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
Maximum Repetitive Reverse Voltage
RRM
I
Average Rectified Forward Current
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
T
stg
Operating Junction Temperature
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
Power Dissipation
D
Thermal Resistance, Junction to Ambient
R
JA
Electrical Characteristics
Symbol
Parameter
V
Breakdown Voltage
R
V
Forward Voltage
F
I
Reverse Current
R
C
Total Capacitance
T
Reverse Recovery Time
t
rr
Peak Forward Recovery Voltage
V
FR
2001 Fairchild Semiconductor Corporation
MMBD914
3
5D
1
2
T
= 25°C unless otherwise noted
A
Parameter
Parameter
T
= 25°C unless otherwise noted
A
Test Conditions
I
= 5.0 A
R
I
= 100 A
R
I
= 10 mA
F
V
= 20 V
R
V
= 20 V, T
= 150 C
R
A
V
= 75 V
R
V
= 0, f = 1.0 MHz
R
I
= 10 mA, V
= 6.0V,
F
R
I
= 1.0 mA, R
= 100
RR
L
I
= 50 mA PEAK SQUARE
F
WAVE PULSE WIDTH = 0.1 S
5 kHz – 100 kHz REP RATE
Connection Diagram
3
1
2NC
Value
Units
100
V
200
mA
1.0
A
2.0
A
-55 to +150
C
150
C
Value
Units
350
mW
357
C/W
Min
Max
Units
V
75
V
100
V
1.0
nA
25
50
A
5.0
A
4.0
pF
4.0
ns
2.5
V
MMBD914, Rev. C

MMBD914 Summary of contents

  • Page 1

    ... PEAK SQUARE F WAVE PULSE WIDTH = 0 kHz – 100 kHz REP RATE Connection Diagram 3 1 2NC Value Units 100 V 200 mA 1.0 A 2.0 A -55 to +150 C 150 C Value Units 350 mW 357 C/W Min Max Units 100 V 1 5.0 A 4.0 pF 4.0 ns 2.5 V MMBD914, Rev. C ...

  • Page 2

    ... TRR - 500 400 300 200 100 0 0 400 300 200 100 Figure 8. Average Rectified Current (I versus Ambient Temperature (T DO-35 Pkg SOT-23 Pkg 50 100 150 Average T em perature ° O Figure 9. Power Derating Curve 50 100 150 Ambient Temperature ° F(AV 200 MMBD914, Rev. C ...

  • Page 3

    ... Figure 4. Forward Voltage vs Forward Current 1.3 Ta ° 1.2 1.1 1.0 300 500 0 2 Figure 6. Total Capacitance vs Reverse Voltage 100 Reverse Voltage 100 V 0.3 0 Forward Current, I [mA 0 everse V oltage [V ] MMBD914, Rev. C ...

  • Page 4

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...