MMBD914 Fairchild Semiconductor, MMBD914 Datasheet
MMBD914
Manufacturer Part Number
MMBD914
Description
DIODE ULTRAFAST HI COND SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBD914.pdf
(4 pages)
Specifications of MMBD914
Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1 V @ 0.01 A
Recovery Time
4 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
5 uA @ 75 V
Power Dissipation
0.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBD914FSTR
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Price
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SSC
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40 562
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DIODES
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20 000
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
Symbol
Symbol
Absolute Maximum Ratings*
*
Thermal Characteristics
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Small Signal Diode
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
I
I
T
T
P
R
V
V
I
C
t
V
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
FR
T
JA
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Peak Forward Recovery Voltage
SOT-23
1
Parameter
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
MMBD914
T
A
I
I
I
V
V
V
V
I
I
I
WAVE PULSE WIDTH = 0.1 S
5 kHz – 100 kHz REP RATE
1
= 25°C unless otherwise noted
R
R
F
F
RR
F
R
R
R
R
= 10 mA
= 10 mA, V
= 5.0 A
= 100 A
5D
= 20 V
= 20 V, T
= 75 V
= 0, f = 1.0 MHz
= 50 mA PEAK SQUARE
= 1.0 mA, R
3
Test Conditions
2
A
R
= 150 C
= 6.0V,
L
= 100
Connection Diagram
-55 to +150
Min
100
Value
Value
75
100
200
150
350
357
1.0
2.0
1
3
Max
1.0
5.0
4.0
4.0
2.5
2NC
25
50
Units
Units
Units
mW
mA
C/W
MMBD914, Rev. C
V
A
A
C
C
nA
pF
ns
V
V
V
V
A
A
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MMBD914 Summary of contents
Page 1
... PEAK SQUARE F WAVE PULSE WIDTH = 0 kHz – 100 kHz REP RATE Connection Diagram 3 1 2NC Value Units 100 V 200 mA 1.0 A 2.0 A -55 to +150 C 150 C Value Units 350 mW 357 C/W Min Max Units 100 V 1 5.0 A 4.0 pF 4.0 ns 2.5 V MMBD914, Rev. C ...
Page 2
... TRR - 500 400 300 200 100 0 0 400 300 200 100 Figure 8. Average Rectified Current (I versus Ambient Temperature (T DO-35 Pkg SOT-23 Pkg 50 100 150 Average T em perature ° O Figure 9. Power Derating Curve 50 100 150 Ambient Temperature ° F(AV 200 MMBD914, Rev. C ...
Page 3
... Figure 4. Forward Voltage vs Forward Current 1.3 Ta ° 1.2 1.1 1.0 300 500 0 2 Figure 6. Total Capacitance vs Reverse Voltage 100 Reverse Voltage 100 V 0.3 0 Forward Current, I [mA 0 everse V oltage [V ] MMBD914, Rev. C ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...