1N5817G ON Semiconductor, 1N5817G Datasheet

DIODE SCHOTTKY 1A 20V DO-41

1N5817G

Manufacturer Part Number
1N5817G
Description
DIODE SCHOTTKY 1A 20V DO-41
Manufacturer
ON Semiconductor
Datasheets

Specifications of 1N5817G

Voltage - Forward (vf) (max) @ If
450mV @ 1A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
1 A @ Ta=55C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.75 V @ 3 A
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Current, Forward
1 A
Current, Reverse
10 mA
Current, Surge
25 A
Package Type
Case 59-10
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-65 to +125 °C
Voltage, Forward
0.45 V
Voltage, Reverse
20 V
Rectifier Type
Schottky Diode
Peak Rep Rev Volt
20V
Avg. Forward Curr (max)
1A
Rev Curr
1000uA
Peak Non-repetitive Surge Current (max)
25A
Forward Voltage
0.75V
Operating Temp Range
-65C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5817G
1N5817GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5817G
Manufacturer:
ON
Quantity:
2 000
Part Number:
1N5817G
Manufacturer:
ON Semiconductor
Quantity:
1 650
1N5817, 1N5818, 1N5819
Axial Lead Rectifiers
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
Mechanical Characteristics:
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 10
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
This series employs the Schottky Barrier principle in a large area
Leads are Readily Solderable
260°C Max for 10 Seconds
Extremely Low V
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
These are Pb−Free Devices*
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
Polarity: Cathode Indicated by Polarity Band
ESD Ratings: Machine Model = C (>400 V)
1N5817 and 1N5819 are Preferred Devices
Human Body Model = 3B (>8000 V)
F
1
See detailed ordering and shipping information on page 6 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
SCHOTTKY BARRIER
20, 30 and 40 VOLTS
ORDERING INFORMATION
A
1N581x =Device Number
YY
WW
G
MARKING DIAGRAM
http://onsemi.com
RECTIFIERS
1.0 AMPERE
=Assembly Location
=Year
=Work Week
=Pb−Free Package
x= 7, 8, or 9
YYWWG
1N581x
Publication Order Number:
A
G
AXIAL LEAD
CASE 59
STYLE 1
1N5817/D

Related parts for 1N5817G

1N5817G Summary of contents

Page 1

... ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 10 http://onsemi.com ...

Page 2

MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non−Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (Note 1 80°C/W, P.C. Board Mounting, see Note 2, T qJA Ambient ...

Page 3

NOTE 3. — DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0 Proper derating may be RWM accomplished by use of equation (1). ...

Page 4

BOTH LEADS TO HEATSINK, 80 EQUAL LENGTH 70 60 MAXIMUM 1/8 1/4 3/8 1/2 L, LEAD LENGTH (INCHES) Figure 4. Steady−State Thermal Resistance 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 ...

Page 5

R qS(A) T A(A) Use of the above model permits junction to lead thermal re- sistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought ...

Page 6

... However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. ORDERING INFORMATION Device 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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