MURS160T3G ON Semiconductor, MURS160T3G Datasheet - Page 4

• Manufacturer Part Number: MURS160T3G
• Description: DIODE ULTRA FAST 1A 600V SMB
• Manufacturer: ON Semiconductor

Specifications of MURS160T3G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.25 V @ 1 A
• Recovery Time: 75 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 35 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Current, Forward: 1 A
• Current, Reverse: 150 μA
• Current, Surge: 35 A
• Package Type: SMB
• Primary Type: Rectifier
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Time, Recovery: 75 ns
• Voltage, Forward: 1.25 V
• Voltage, Reverse: 600 V
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 600V
• Avg. Forward Curr (max): 2A
• Rev Curr: 5uA
• Peak Non-repetitive Surge Current (max): 35A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 175C
• Rev Recov Time: 75ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MURS160T3GOS; MURS160T3GOS; MURS160T3GOSTR

0.07
0.05
0.03
0.02
0.01
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
0
0.3
0
0.5
20
Figure 6. Typical Forward Voltage
0.7
Figure 9. Current Derating, Case
v
F,
40
INSTANTANEOUS VOLTAGE (VOLTS)
0.9
T
60
C
, CASE TEMPERATURE (°C)
175°C
1.1
80
T
1.3
C
100
SQUARE WAVE
= 25°C
RATED VOLTAGE APPLIED
1.5
100°C
120
DC
R
1.7
qJC
T
140
J
= 175°C
= 13°C/W
MURS140T3, MURS160T3
1.9
160
http://onsemi.com
2.1
180
2.3
200
4
0.008
0.004
0.08
0.04
0.02
400
200
8.0
4.0
2.0
0.8
0.4
0.2
5.0
5.0
4.0
3.0
2.0
1.0
80
40
20
25
20
15
10
0
0
0
0
0
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied V
below rated V
(CAPACITANCE LOAD)
T
J
4.0
= 175°C
100
Figure 7. Typical Reverse Current*
I
I
I
PK
AV
0.5
8.0
F(AV)
Figure 8. Typical Capacitance
R
.
Figure 10. Power Dissipation
+ 20
, AVERAGE FORWARD CURRENT (AMPS)
V
V
200
R
R
12
, REVERSE VOLTAGE (VOLTS)
, REVERSE VOLTAGE (VOLTS)
1.0
16
T
T
T
300
J
J
J
= 175°C
= 100°C
= 25°C
20
10
400
CAPACITANCE AT
24
1.5
NOTE: TYPICAL
0 V = 24 pF
28
500
5.0
SQUARE WAVE
R
is sufficiently
2.0
32
600
36
DC
700
2.5
40