SDT12S60 Infineon Technologies, SDT12S60 Datasheet
SDT12S60
Specifications of SDT12S60
SDT12S60X
SDT12S60XK
SDT12S60XTIN
SDT12S60XTIN
SP000013825
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SDT12S60 Summary of contents
Page 1
... Symbol I =100° ∫ Page 1 thinQ! SiC Schottky Diode Product Summary V RRM PG-TO220-2-2. Marking Pin 1 Pin 2 D12S60 C Value FRMS 36 FSM 49 FRM 120 FMAX 6. 600 RRM 600 RSM 88.2 tot T -55... +175 j , stg SDT12S60 SDT12S60 V 600 Unit A A² °C 2008-06-03 ...
Page 2
... Reverse current =600V, T =25° =600V, T =150° Rev. 2.3 Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol Page 2 SDT12S60 SDT12S60 Values Unit min. typ. max 1.7 K Values Unit min. typ. max 1.5 1.7 - 1.7 2.1 µ 400 - 100 ...
Page 3
... F F Switching time =400V, I =12A /dt=200A/µ Total capacitance =1V, T =25°C, f=1MHz =300V, T =25°C, f=1MHz =600V, T =25°C, f=1MHz Rev. 2 °C, unless otherwise specified j Symbol Q c =150° =150° Page 3 SDT12S60 SDT12S60 Values Unit min. typ. max n. 450 - - 2008-06-03 ...
Page 4
... Rev. 2.3 2 Diode forward current = parameter: T °C 180 Typ. forward power dissipation vs. average forward current P F(AV 1 Page ≤ 175 ° 100 120 140 =100° d=0.1 d=0.2 36 d=0.5 d SDT12S60 SDT12S60 °C 180 F(AV) 2008-06-03 ...
Page 5
... MHz C 600 pF 500 450 400 350 300 250 200 150 100 Rev. 2.3 6 Transient thermal impedance thJC parameter : K 600 Typ. C stored energy µ Page 5 SDT12S60 SDT12S60 ) SDT12S60 single pulse - 100 200 300 400 2008-06- 0.50 0.20 0.10 0.05 0.02 0. 600 V R ...
Page 6
... Typ. capacitive charge vs. current slope / parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 2 A/µs 1000 di /dt F Page 6 SDT12S60 SDT12S60 2008-06-03 ...
Page 7
... PG-TO-220-2-2 Rev. 2.3 Page 7 SDT12S60 SDT12S60 2008-06-03 ...
Page 8
... Rev. 2.3 Page 8 SDT12S60 SDT12S60 2008-06-03 ...