RF2001T4S Rohm Semiconductor, RF2001T4S Datasheet

RF2001T4S

Manufacturer Part Number

RF2001T4S

Description

DIODE FAST REC 430V 20.0A TO-220

Manufacturer

Rohm Semiconductor

Datasheet

1.RF2001T4S.pdf (4 pages)

Specifications of RF2001T4S

Voltage - Forward (vf) (max) @ If

1.6V @ 20A

Voltage - Dc Reverse (vr) (max)

400V

Current - Average Rectified (io)

20A

Current - Reverse Leakage @ Vr

10µA @ 400V

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Product

Fast Recovery Rectifier

Configuration

Single Dual Anode

Reverse Voltage

430 V

Forward Voltage Drop

1.6 V

Recovery Time

30 ns

Forward Continuous Current

20 A

Max Surge Current

100 A

Reverse Current Ir

10 uA

Mounting Style

Through Hole

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RF2001T4SFF55

Manufacturer:

ROHM

Quantity:

1 122

Current page: 1 of 4
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General rectification

1) High reliability.(TO-220)

2) Low noise.

3) Very fast switching .

Silicon epitaxial planar

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current (*1)

Forward current surge peak (60Hz/1cyc)(*1)

Junction temperature

Storage temperature

(*1)Business frequency, Rating of R-load, Tc=94CMAX.

Forward voltage

Reverse current

Reverse recovery time

Fast recovery diode

Applications

Features

Construction

Absolute maximum ratings (Ta=25C)

Electrical characteristic (Ta=25C)

RF2001T4S

Parameter

 Dimensions (Unit : mm)

1.2

1.3

0.8

ROHM : ＴO220FN

①

(1) (2) (3)

10.0±0.3

　　　 0.1

Symbol

Manufacture Date

Tstg

FSM

trr

①

Min. Typ.

1/3

-55 to +150

Limits

430

400

100

150

0.7±0.1

Max.

0.05

1.6

4.5±0.3

　　　 0.1

2.6±0.5

2.8±0.2

　　　 0.1

Unit

C

μA

Structure

=20A

=0.5A,I

=400V

(1) (2) (3)

2010.03 - Rev.B

Conditions

=1A Irr=0.25*I

Related parts for RF2001T4S

RF2001T4S Summary of contents

Page 1

... Fast recovery diode RF2001T4S Applications  Dimensions (Unit : mm) General rectification Features 1) High reliability.(TO-220) 2) Low noise. 3) Very fast switching . Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) ...

Page 2

... RF2001T4S Electrical characteristics curves 100 Ta=75C Ta=125C 10 Ta=25C Ta=150C Ta=-25C 1 0.1 0.01 0 200 400 600 800 1000 1200 1400 1600 1800 FORWARD VOLTAGE:V (mV CHARACTERISTICS F F 1600 Ta=25C I =20A F n=20pcs 1500 1400 AVE:1399mV 1300 V DISPERSION MAP ...

Page 3

... RF2001T4S D=t =200V R T Tj=150C 30 D=1 Sin(=180 100 125 AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 　 D=t =200V Tj=150C 30 D=1 Sin(=180 100 125 150 CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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