BAS16WT1G ON Semiconductor, BAS16WT1G Datasheet

DIODE SWITCH 200MA 75V SOT323

BAS16WT1G

Manufacturer Part Number
BAS16WT1G
Description
DIODE SWITCH 200MA 75V SOT323
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAS16WT1G

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Reverse Leakage @ Vr
1µA @ 75V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
6ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Average Rectified (io)
-
Other names
BAS16WT1GOSTR

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BAS16WT1G
Silicon Switching Diode
Features
 Semiconductor Components Industries, LLC, 2010
October, 2010- - Rev. 8
MAXIMUM RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
Total Power Dissipation,
One Diode Loaded T
Derate above 25C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
Thermal Resistance,
Compliant
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
Junction--to--Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Characteristic
Rating
A
= 25C
(T
A
= 25C)
I
Symbol
Symbol
FM(surge)
T
R
J
V
P
, T
θJA
I
R
R
D
stg
-- 55 to
Value
Max
+150
625
200
500
200
1.6
75
1
mW/C
C/W
Unit
Unit
mW
mA
mA
C
V
†For information on tape and reel specifications,
BAS16WT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
CASE 419
STYLE 2
SC- -70
ORDERING INFORMATION
A6
M
G
CATHODE
http://onsemi.com
3
(Pb--Free)
Package
= Specific Device Code
= Date Code
= Pb--Free Package
SC--70
Publication Order Number:
3000 / Tape & Reel
1
ANODE
MARKING
DIAGRAM
1
Shipping
A6 MG
BAS16WT1/D
G

Related parts for BAS16WT1G

BAS16WT1G Summary of contents

Page 1

... Pb--Free Package G (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BAS16WT1G SC--70 3000 / Tape & Reel (Pb--Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Forward Voltage (I = 1 150 mA) F Reverse Current ( 150C) R ...

Page 3

MAX 10% 90 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit 20 ns MAX 10% 90 400 ns Figure 2. Stored Charge Equivalent Test Circuit 120 ns V 90% 10 ...

Page 4

T = 85 40C A 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 4. Forward Voltage 0.68 0.64 0.60 0.56 0. 1.0 0 25C A ...

Page 5

... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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