1N4149TR Fairchild Semiconductor, 1N4149TR Datasheet
1N4149TR
Manufacturer Part Number
1N4149TR
Description
DIODE SGL JUNCT 100V 4.0NS DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.1N4149_T50R.pdf
(2 pages)
Specifications of 1N4149TR
Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
500mA
Current - Reverse Leakage @ Vr
25nA @ 20V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1 V at 0.01 A
Recovery Time
4 ns
Forward Continuous Current
0.5 A
Max Surge Current
4 A
Reverse Current Ir
0.025 uA
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N4149TR
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
1N4149TR
Manufacturer:
FSC
Quantity:
120 000
©2004 Fairchild Semiconductor Corporation
1N4149 Rev. A
1N4149
Small Signal Diode
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
T
JA
Symbol
Symbol
Symbol
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
T
C
Parameter
Parameter
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
Color Band Denotes Cathode
I
I
I
V
V
V
I
R
R
R
F
F
R
R
R
L
= 10mA
= 10mA, V
= 5 A
= 100 A
= 100 , I
= 20V
= 20V, T
= 0, f = 1.0MHz
DO-35
1
Conditions
A
rr
R
= 150 C
= 1mA
= 6.0V
-65 to +200
Value
Value
100
500
175
500
300
1.0
4.0
Min.
100
75
Max
1.0
25
50
2
4
December 2004
www.fairchildsemi.com
Unit
Unit
mW
mA
C/W
V
A
A
C
C
Units
nA
pF
ns
V
V
V
A
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1N4149TR Summary of contents
Page 1
... Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2004 Fairchild Semiconductor Corporation 1N4149 Rev. A DO-35 Color Band Denotes Cathode T = 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions ...
Page 2
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...