1N483B Fairchild Semiconductor, 1N483B Datasheet

DIODE SS 80V 200MA DO-35

1N483B

Manufacturer Part Number
1N483B
Description
DIODE SS 80V 200MA DO-35
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 1N483B

Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
80V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
25nA @ 60V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
80 V
Forward Voltage Drop
1 V @ 0.1 A
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.025 uA
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2005 Fairchild Semiconductor Corporation
1N483B Rev. A
1N483B
Small Signal Diode
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
F(AV)
FSM
R
STG
J
RRM
D
R
F
Symbol
Symbol
Symbol
JA
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
I
I
V
V
R
F
Color Band Denotes Cathode
R
R
= 100mA
= 100 A
= 60V
= 60V, T
DO-35
1
Conditions
A
= 150 C
-65 to +200
Value
Value
200
175
500
300
1.0
4.0
80
Min.
80
Max
1.0
25
5
January 2005
www.fairchildsemi.com
Unit
Unit
mW
mA
C/W
V
A
A
C
C
Units
nA
V
V
A

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1N483B Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient JA Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R ©2005 Fairchild Semiconductor Corporation 1N483B Rev. A DO-35 Color Band Denotes Cathode T = 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Conditions I = 100 A R ...

Page 2

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete 1N483B Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...

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