FDH400_T50A Fairchild Semiconductor, FDH400_T50A Datasheet

DIODE GEN PURPOSE 150V DO-35

FDH400_T50A

Manufacturer Part Number
FDH400_T50A
Description
DIODE GEN PURPOSE 150V DO-35
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDH400_T50A

Voltage - Forward (vf) (max) @ If
1.1V @ 300mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 150V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1997 Fairchild Semiconductor International
P
R
W
I
I
i
i
T
T
Symbol
Symbol
f
f(surge)
O
F
stg
J
D
High Voltage General Purpose Diode
Absolute Maximum Ratings*
*
Sourced from Process 1J. See MMBD1401-1405 for characteristics.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
IV
JA
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Derate above 25 C
DO-35
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Characteristic
FDH/FDLL 400
Parameter
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
TA = 25°C unless otherwise noted
LL-34
TA = 25°C unless otherwise noted
FDH/FDLL400
DEVICE
FDLL400
FDH/FDLL 400
COLOR BAND MARKING
Max
3.33
500
300
-65 to +200
1ST BAND
Value
BROWN
150
200
500
600
175
1.0
4.0
2ND BAND
VIOLET
Units
mW/ C
Units
mA
mA
mA
mW
C/W
V
A
A
C
C

Related parts for FDH400_T50A

FDH400_T50A Summary of contents

Page 1

... Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor International FDH/FDLL 400 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL TA = 25°C unless otherwise noted Parameter FDH/FDLL400 TA = 25°C unless otherwise noted ...

Page 2

Electrical Characteristics Symbol Parameter B Breakdown Voltage FDH/FDLL400 V I Reverse Current FDH/FDLL400 R V Forward Voltage FDH/FDLL400 F C Diode Capacitance FDH/FDLL400 O T Reverse Recovery Time RR FDH/FDLL400 High Voltage General Purpose Diode TA = 25°C unless otherwise ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...

Related keywords