1N3595 Fairchild Semiconductor, 1N3595 Datasheet
1N3595
Manufacturer Part Number
1N3595
Description
DIODE SGL JUNCT 150V DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.1N3595TR.pdf
(2 pages)
Specifications of 1N3595
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
1nA @ 125V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
3µs
Capacitance @ Vr, F
8pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
150 V
Forward Voltage Drop
1 V
Recovery Time
3000 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.001 uA
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N3595
Manufacturer:
FSC
Quantity:
20 301
Company:
Part Number:
1N3595-1JAN
Manufacturer:
ZCOMM
Quantity:
1 400
Company:
Part Number:
1N3595-1JANTX
Manufacturer:
Microsemi
Quantity:
1 400
2002 Fairchild Semiconductor Corporation
Small Signal Diode
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Symbol
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
Parameter
Parameter
T
A
= 25°C unless otherwise noted
1N3595
Color Band Denotes Cathode
T
A
= 25°C unless otherwise noted
I
I
I
I
I
I
I
V
V
V
V
V
I
R
R
F
F
F
F
F
F
F
DO-35
R
R
R
R
R
L
= 1.0 mA
= 5.0 mA
= 10 mA
= 50 mA
= 100 mA
= 200 mA
= 10 mA, V
= 100 A
= 1.0 k
= 125 V
= 30 V, T
= 125 V, T
= 125 V, T
= 0, f = 1.0 MHz
Test Conditions
A
R
A
A
= 125 C
= 3.5 V,
= 125 C
= 150 C
-65 to +200
Value
Value
Min
0.52
0.60
0.65
0.75
0.79
0.83
150
150
200
175
500
300
1.0
4.0
Max
0.68
0.75
0.80
0.88
0.92
1.00
0.3
0.5
1
3
8
3
Units
Units
mW
mA
C/W
Units
V
A
A
C
C
nA
1N3595, Rev. A
pF
V
V
V
V
V
V
V
A
A
A
s
Related parts for 1N3595
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
1N3595 Summary of contents
Page 1
... 125 125 125 150 1.0 MHz Value Units 150 V 200 mA 1.0 A 4.0 A -65 to +200 C 175 C Value Units 500 mW 300 C/W Min Max Units 150 V 0.52 0.68 V 0.60 0.75 V 0.65 0.80 V 0.75 0.88 V 0.79 0.92 V 0.83 1. 0 1N3595, Rev. A ...
Page 2
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...