R-1
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
max.
J
MAXIMUM RATINGS (T
= 25 °C unless otherwise noted)
A
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
= 55 °C
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Maximum full load reverse current, full cycle average,
0.375" (9.5 mm) lead length at T
= 55 °C
L
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (T
PARAMETER
TEST CONDITIONS
Maximum instantaneous
0.5 A
forward voltage drop
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse
I
= 0.5 A, I
F
recovery time
I
= 0.25 A
rr
Typical junction capacitance
4.0 V, 1 MHz
Document Number: 88618
For technical questions within your region, please contact one of the following:
Revision: 10-Nov-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Vishay General Semiconductor
Photoflash Rectifier
FEATURES
• Glass passivated chip junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high voltage rectification of photoflash
application.
0.5 A
1600 V
MECHANICAL DATA
20 A
Case: R-1
Molding compound meets UL 94 V-0 flammability rating
1.5 V
Base P/N-E3 - RoHS compliant, commercial grade
300 ns
Terminals: Matte tin plated leads, solderable per
175 °C
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
SYMBOL
V
RRM
V
RMS
V
DC
l
F(AV)
I
FSM
I
R(AV)
T
, T
J
STG
= 25 °C unless otherwise noted)
A
SYMBOL
V
F
T
= 25 °C
I
A
R
= 1.0 A,
R
t
rr
C
J
DiodesEurope@vishay.com
GHR16
VALUE
UNIT
1600
V
1120
V
1600
V
0.5
A
20
A
100
μA
- 65 to + 175
°C
VALUE
UNIT
1.5
V
5.0
μA
300
ns
10
pF
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