SA2M-E3/5AT Vishay, SA2M-E3/5AT Datasheet

SA2M-E3/5AT

Manufacturer Part Number

SA2M-E3/5AT

Description

DIODE GPP 2A 1000V SMA

Manufacturer

Vishay

Datasheet

1.SA2B-E35AT.pdf (4 pages)

Specifications of SA2M-E3/5AT

Voltage - Forward (vf) (max) @ If

1.1V @ 2A

Voltage - Dc Reverse (vr) (max)

1000V (1kV)

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

3µA @ 1000V

Diode Type

Standard

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

1.5µs

Mounting Type

Surface Mount

Package / Case

DO-214AC, SMA

Product

Standard Recovery Rectifier

Configuration

Single

Reverse Voltage

1000 V

Forward Voltage Drop

1.1 V

Recovery Time

1500 ns

Forward Continuous Current

2 A

Max Surge Current

55 A

Reverse Current Ir

3 uA

Mounting Style

SMD/SMT

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SA2M-E3/5AT

Manufacturer:

Vishay Semiconductors

Quantity:

7 120

Company:

H&T Electronics

Part Number:

SA2M-E3/5AT

Quantity:

70 000

Company:

H&T Electronics

Part Number:

SA2M-E3/5AT

Quantity:

70 000

Current page: 1 of 4
Download datasheet (83Kb)

Notes

(1)

(2)

Document Number: 88969

Revision: 13-Oct-09

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Device marking code

Maximum repetitive peak reverse voltage

Average forward current

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

Operating junction and storage temperature range

ELECTRICAL CHARACTERISTICS (T

PARAMETER

Instantaneous forward voltage

Reverse current

Typical reverse recovery time

Typical junction capacitance

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width ≤ 40 ms

at I

F(AV)

FSM

RRM

max.

= 2.0 A

DO-214AC (SMA)

Surface Mount Glass Passivated Rectifier

DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

For technical questions within your region, please contact one of the following:

= 25 °C unless otherwise noted)

Rated V

4.0 V, 1 MHz

= 1.0 A

= 2.0 A

= 1.0 A

= 2.0 A

= 0.5 A, I

= 0.25 A

TEST CONDITIONS

100 V to 1000 V

0.854 V

150 °C

3.0 μA

2.0 A

55 A

= 1.0 A,

= 25 °C unless otherwise noted)

= 25 °C

= 125 °C

SYMBOL

, T

F(AV)

FSM

RRM

New Product

STG

SYMBOL

SA2B

100

(2)

(1)

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

• Compliant to RoHS directive 2002/95/EC and in

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer

and telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

260 °C

accordance to WEEE 2002/96/EC

SA2D

200

DiodesEurope@vishay.com

Vishay General Semiconductor

0.911

0.954

0.805

0.854

TYP.

0.19

1.5

SA2G

400

- 55 to + 150

2.0

SA2J

600

SA2B thru SA2M

SA2K

800

MAX.

0.95

1.1

www.vishay.com

SA2M

1000

UNIT

μA

°C

μs

Related parts for SA2M-E3/5AT

SA2M-E3/5AT Summary of contents

Page 1

... RRM I F(AV) I FSM STG = 25 °C unless otherwise noted) A SYMBOL ° 125 ° ° 125 ° 1 DiodesEurope@vishay.com SA2B thru SA2M SA2G SA2J SA2K SA2M 400 600 800 1000 2 150 TYP. MAX. 0.911 - 0.954 1.1 0.805 - 0.854 0. www.vishay.com UNIT °C ...

Page 2

... SA2B thru SA2M Vishay General Semiconductor THERMAL CHARACTERISTICS (T PARAMETER SYMBOL R θJA Typical thermal resistance R θJL Note (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.79" x 0.79" ( mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) SA2J-E3/61T 0.064 SA2J-E3/5AT 0 ...

Page 3

... MIN. 0.006 (0.152) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) DiodesEurope@vishay.com SA2B thru SA2M Vishay General Semiconductor Junction to Ambient 0 100 1000 t - Pulse Duration (s) Mounting Pad Layout 0.074 (1.88) MAX. 0.208 (5.28) REF ...

Page 4

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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