ES1G Fairchild Semiconductor, ES1G Datasheet

DIODE FAST 1A 400V SMA

ES1G

Manufacturer Part Number
ES1G
Description
DIODE FAST 1A 400V SMA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of ES1G

Voltage - Forward (vf) (max) @ If
1.3V @ 1A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.3 V
Recovery Time
35 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.3V
Reverse Recovery Time Trr Max
35ns
Forward Surge Current Ifsm Max
30A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ES1GFSTR

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0
©2007 Fairchild Semiconductor Corporation
ES1F - ES1J Rev. A
ES1F - ES1J
Fast Rectifiers
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for high efficiency.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.
Electrical Characteristics
R
R
Symbol
Symbol
Symbol
θJA
θJL
V
I
T
I
F(AV)
FSM
P
V
RRM
T
T
STG
I
C
R
D
rr
J
F
j
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Lead *
Maximum Forward Voltage @ I
Maximum Reverse Recovery Time
Maximum Reverse Current @ rated V
Typical Junction Capacitance
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave (JEDEC method)
Junction Temperature
Storage Temperature Range
Power Dissipation
I
V
F
R
= 0.5 A, I
= 4.0 V, f = 1.0 MHz
Parameter
Parameter
Parameter
R
= 1.0 A, I
T
C
RR
F
= 25°C unless otherwise noted
= 0.25 A
= 1.0 A
T
a
= 25°C unless otherwise noted
R
Color Band Denotes Cathode
T
T
A
A
= 100°C
SMA(DO-214AC)
= 25°C
1
ES1F
300
10.0
1.3
ES1G
400
-55 to 150
Value
Value
Value
1.47
150
100
1.0
5.0
30
85
35
35
ES1H
500
1.7
8.0
ES1J
600
July 2007
www.fairchildsemi.com
Units
Units
Units
°C/W
°C/W
°C
°C
uA
pF
ns
W
V
A
A
V

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ES1G Summary of contents

Page 1

... Maximum Reverse Current @ rated Typical Junction Capacitance 4 1.0 MHz R ©2007 Fairchild Semiconductor Corporation ES1F - ES1J Rev. A SMA(DO-214AC) Color Band Denotes Cathode T = 25°C unless otherwise noted a ES1F ES1G 300 400 T = 25°C unless otherwise noted C = 1 25° 100° ...

Page 2

Typical Performance Characteristics FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.2 1.0 RESISTIVE OR 0.8 INDUCTIVE LOAD 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS 0.6 0.4 0 100 110 LEAD TEMPERATURE FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 0 Tj=25 ...

Page 3

Package Dimensions ES1F - ES1J Rev. A SMA / DO - 214AC 3 Dimensions in Millimeters www.fairchildsemi.com ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...

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