S4PK-M3/87A Vishay, S4PK-M3/87A Datasheet - Page 3

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S4PK-M3/87A

Manufacturer Part Number
S4PK-M3/87A
Description
DIODE GPP 4A 800V SMPC
Manufacturer
Vishay
Series
eSMP™r
Datasheet

Specifications of S4PK-M3/87A

Voltage - Forward (vf) (max) @ If
1.1V @ 4A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
10µA @ 800V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2.5µs
Mounting Type
Surface Mount
Package / Case
TO-277A (SMPC)
Product
Standard Recovery Rectifier
Configuration
Single Dual Anode
Reverse Voltage
800 V
Forward Voltage Drop
1.1 V
Recovery Time
2500 ns
Forward Continuous Current
4 A
Max Surge Current
100 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S4PK-M3/87A
Manufacturer:
VISHAY/威世
Quantity:
20 000
RATINGS AND CHARACTERISTICS CURVES
Document Number: 89032
Revision: 24-Nov-09
(T
A
Figure 3. Typical Instantaneous Forward Characteristics
= 25 °C unless otherwise noted)
0.01
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Figure 1. Maximum Forward Current Derating Curve
0.1
10
0
0
1
0.3
0
0
Figure 2. Forward Power Loss Characteristics
T
A
T
at the Cathode Band Terminal
= 125 °C
L
25
measured
0.5
Instantaneous Forward Voltage (V)
T
1
A
Average Forward Current (A)
D = 0.1
= 150 °C
50
Lead Temperature (°C)
0.7
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
75
D = 0.2
D = 0.3
For technical questions within your region, please contact one of the following:
0.9
Resistive or Inductive Load
T
A
= 25 °C
100
3
D = 0.5
D = t
1.1
D = 0.8
125
p
/T
4
1.3
150
D = 1.0
T
t
p
175
1.5
5
1000
0.01
100
100
100
0.1
10
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.01
0.1
10
Figure 6. Typical Transient Thermal Impedance
DiodesEurope@vishay.com
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
Figure 5. Typical Junction Capacitance
20
30
0.1
T
A
t - Pulse Duration (s)
= 150 °C
Reverse Voltage (V)
40
1
50
S4PB thru S4PM
1
T
A
60
= 125 °C
10
70
T
A
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 25 °C
10
80
= 50 mVp-p
90
www.vishay.com
100
100
100
3

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