SS36 Fairchild Semiconductor, SS36 Datasheet
SS36
Manufacturer Part Number
SS36
Description
DIODE SCHOTTKY 3A 60V SMC
Manufacturer
Fairchild Semiconductor
Datasheet
1.SS34.pdf
(3 pages)
Specifications of SS36
Voltage - Forward (vf) (max) @ If
750mV @ 3A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
500µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
3 A @ Ta=75C
Max Surge Current
100 A
Configuration
Single
Forward Voltage Drop
0.75 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
SS36FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SS36
Manufacturer:
TOSHIBA
Quantity:
50 000
Part Number:
SS36
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
SS36(SMA)
Manufacturer:
DEC
Quantity:
3 888
Company:
Part Number:
SS36-E3/57T
Manufacturer:
POWER
Quantity:
34 000
Company:
Part Number:
SS36-E3/57T
Manufacturer:
VISHAY
Quantity:
54 000
Part Number:
SS36-E3/57T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SS36-E3/57T(S6)
Manufacturer:
JXND/VISHAYMAS
Quantity:
20 000
Company:
Part Number:
SS36-E3/59T
Manufacturer:
VISHAY
Quantity:
252
Part Number:
SS36-E3/9AT
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SS360PT
Manufacturer:
HONEYWELL
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Schottky Rectifiers
Symbol
Absolute Maximum Ratings*
*
Thermal Characteristics
Symbol
*
Electrical Characteristics
Symbol
V
I
I
T
T
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm).
P
R
R
F(AV)
FSM
V
I
J
R
Features
•
•
•
•
stg
RRM
D
F
JA
JL
Metal to silicon rectifiers, majority
carrier conduction.
Low forward voltage drop.
Easy pick and place.
High surge current capability.
Operating Junction Temperature
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Power Dissipation
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Lead
Forward Voltage @ 3.0 A
Reverse Current @ rated V
8.3 ms Single Half-Sine-Wave
Parameter
Parameter
Parameter
R
SS32 - S310
T
A
T
T
= 25°C unless otherwise noted
A
A
= 25 C
= 100 C
T
A
= 25°C unless otherwise noted
A
= 75°C
COLOR BAND DENOTES CATHODE
32
32
20
SMC/DO-214AB
500
20
33
33
30
34 35
34 35
40 50
-55 to +150
-55 to +150
Device
Value
Value
2.27
750
100
3.0
0.5
55
17
36
36
60
38 39
38
80 90 100
10
850
39 310
310
SS32 - S310, Rev. D
Units
Units
Units
mV
mA
mA
C/W
C/W
W
V
A
A
C
C
Related parts for SS36
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
SS36 Summary of contents
Page 1
... Thermal Resistance, Junction to Lead Device mounted on FR-4 PCB 0.55 x 0.55" ( mm). Electrical Characteristics Symbol Parameter V Forward Voltage @ 3 Reverse Current @ rated V R 2001 Fairchild Semiconductor Corporation SS32 - S310 SMC/DO-214AB COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 75° 25°C unless otherwise noted ...
Page 2
Typical Characteristics 3 2 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED 1 ON 0.55 x 0.55" (14 x 14) mm COPPER PAD AREAS 100 125 Ambient Temperature [ºC] Figure 1. Forward Current Derating Curve 50 º ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...