VF20120SG-E3/4W Vishay, VF20120SG-E3/4W Datasheet

DIODE SCHOTTKY 20A 120V TO220-3

VF20120SG-E3/4W

Manufacturer Part Number
VF20120SG-E3/4W
Description
DIODE SCHOTTKY 20A 120V TO220-3
Manufacturer
Vishay
Datasheet

Specifications of VF20120SG-E3/4W

Voltage - Forward (vf) (max) @ If
1.33V @ 20A
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
20A
Current - Reverse Leakage @ Vr
250µA @ 120V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads, Isolated), ITO-220AB
Product
Schottky Rectifiers
Peak Reverse Voltage
120 V
Forward Continuous Current
20 A
Max Surge Current
150 A
Configuration
Single Dual Anode
Forward Voltage Drop
1.33 V
Maximum Reverse Leakage Current
250 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 88994
Revision: 24-Jun-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T
Peak repetitive reverse current
at t
Voltage rate of change (rated V
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
p
PIN 1
PIN 3
NC
= 2 µs, 1 kHz, T
A
K
V
TO-220AB
TO-263AB
V20120SG
VB20120SG
F
at I
T
V
I
J
I
F(AV)
FSM
High-Voltage Trench MOS Barrier Schottky Rectifier
RRM
F
max.
= 20 A
HEATSINK
NC
CASE
K
PIN 2
J
A
= 38 °C ± 2 °C
1
2
TMBS
3
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
R
)
V20120SG, VF20120SG, VB20120SG & VI20120SG
A
®
= 25 °C unless otherwise noted)
J
= 25 °C, L = 60 mH
K
PIN 1
PIN 3
PIN 1
PIN 3
TO-262AA
ITO-220AB
VF20120SG
VI20120SG
Ultra Low V
150 °C
0.78 V
120 V
150 A
20 A
PIN 2
PIN 2
K
1
1
New Product
2
2
SYMBOL
3
T
3
F
V
J
dV/dt
I
I
I
F(AV)
E
, T
RRM
V
FSM
RRM
= 0.54 V at I
AC
AS
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
V20120SG
• Trench MOS Schottky technology
• Low forward voltage drop, low power
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
• Solder bath temperature 275 °C maximum, 10 s,
• Compliant to RoHS directive 2002/95/EC and in
losses
maximum peak of 245 °C (for TO-263AB package)
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
accordance to WEEE 2002/96/EC
F
PDD-Europe@vishay.com
TO-220AB,
= 5 A
Vishay General Semiconductor
VF20120SG
- 40 to + 150
10 000
1500
120
150
0.5
20
80
ITO-220AB,
VB20120SG
VI20120SG
TO-263AB
www.vishay.com
UNIT
V/µs
mJ
°C
V
A
A
A
V
and
1

Related parts for VF20120SG-E3/4W

VF20120SG-E3/4W Summary of contents

Page 1

... V20120SG, VF20120SG, VB20120SG & VI20120SG High-Voltage Trench MOS Barrier Schottky Rectifier ® TMBS TO-220AB V20120SG PIN 1 PIN 1 PIN 2 CASE PIN 3 PIN 3 TO-263AB VB20120SG PIN HEATSINK PIN 3 PRIMARY CHARACTERISTICS I F(AV) V RRM I FSM max. J MAXIMUM RATINGS ( °C unless otherwise noted) A PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig ...

Page 2

... Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V20120SG-E3/4W ITO-220AB VF20120SG-E3/4W TO-263AB VB20120SG-E3/4W TO-263AB VB20120SG-E3/8W TO-262AA VI20120SG-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted ...

Page 3

... V20120SG, VF20120SG, VB20120SG & VI20120SG 100 T = 150 ° 125 ° 100 ° °C A 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 100 T = 150 ° 125 ° 100 °C A 0.1 0. °C A 0.001 Percent of Rated Peak Reverse Voltage (%) Figure 4 ...

Page 4

... V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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