MBR10H50-E3/45 Vishay, MBR10H50-E3/45 Datasheet

DIODE SCHOTT 10A 45V SGL TO220-2

MBR10H50-E3/45

Manufacturer Part Number
MBR10H50-E3/45
Description
DIODE SCHOTT 10A 45V SGL TO220-2
Manufacturer
Vishay
Datasheets

Specifications of MBR10H50-E3/45

Voltage - Forward (vf) (max) @ If
710mV @ 10A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
100µA @ 50V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-2 Fused Center, TO-220AC
Product
Schottky Diodes
Peak Reverse Voltage
50 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.85 V at 20 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 88780
Revision: 19-May-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Non-repetitive avalanche energy at 25 °C, I
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse current at t
Peak non-repetitive reverse energy (8/20 µs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
MBR10Hxx
PIN 2
PIN 1
TO-220AC
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
CASE
K
1
MBRB10Hxx
PIN 2
PIN 1
TO-263AB
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
2
For technical questions within your region, please contact one of the following:
R
)
p
C
= 2.0 µs, 1 kHz
1
= 25 °C unless otherwise noted)
HEATSINK
2
ITO-220AC
MBRF10Hxx
PIN 1
PIN 2
0.55 V, 0.61 V
K
AS
Schottky Barrier Rectifier
35 V to 60 V
100 µA
= 4 A, L = 10 mH
175 °C
150 A
10 A
1
2
MBR(F,B)10H35 thru MBR(F,B)10H60
SYMBOL
V
V
E
I
dV/dt
I
I
V
F(AV)
E
RRM
FSM
RWM
V
RRM
RSM
DC
AS
C
FEATURES
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AC and
• Component in accordance to RoHS 2002/95/EC
MBR10H35
peak of 245 °C (for TO-263AB package)
ITO-220AC package)
and WEEE 2002/96/EC
35
35
35
Vishay General Semiconductor
1.0
20
MBR10H45
45
45
45
10 000
150
10
80
25
MBR10H50
50
50
50
0.5
10
MBR10H60
60
60
60
www.vishay.com
UNIT
V/µs
mJ
mJ
kV
V
V
V
A
A
A
1

Related parts for MBR10H50-E3/45

MBR10H50-E3/45 Summary of contents

Page 1

... Q101 qualified), meets JESD 201 class 2 100 µA whisker test 175 °C Polarity: As marked Mounting Torque: 10 in-lbs maximum SYMBOL MBR10H35 V 35 RRM V 35 RWM F(AV FSM I RRM E RSM V C dV/dt Vishay General Semiconductor MBR10H45 MBR10H50 MBR10H60 150 1.0 0 000 www.vishay.com UNIT V/µs 1 ...

Page 2

... SYMBOL R θJC UNIT WEIGHT (g) PACKAGE CODE 1.80 1.94 1.33 1.33 (1) 1.80 (1) 1.94 (1) 1.33 (1) 1.33 MBR10H45 MBR10H50 MBR10H60 - 175 - 175 1500 MBR10H35 MBR10H50 MBR10H45 MBR10H60 TYP. MAX. TYP. MAX. - 0.63 - 0.71 0.49 0.55 0.57 0.61 - 0.75 - 0.85 0.62 0.68 0.68 0.71 - 100 - 4 ...

Page 3

... MBR10H35 - MBR10H45 MBR10H35 - MBR10H45 MBR10H35 - MBR10H45 MBR10H35 - MBR10H45 MBR10H35 - MBR10H45 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 MBR10H50 - MBR10H60 ° Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics ° ...

Page 4

... MBR(F,B)10H35 thru MBR(F,B)10H60 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.154 (3.91) DIA. 0.370 (9.40) 0.148 (3.74) DIA. 0.360 (9.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.350 (8.89) 0.625 (15.87) 0.330 (8.38) PIN 1 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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