FES16GT Fairchild Semiconductor, FES16GT Datasheet
FES16GT
Manufacturer Part Number
FES16GT
Description
DIODE FAST 16A 400V TO220AC
Manufacturer
Fairchild Semiconductor
Datasheet
1.FES16CT.pdf
(3 pages)
Specifications of FES16GT
Voltage - Forward (vf) (max) @ If
1.3V @ 8A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
16A
Current - Reverse Leakage @ Vr
10µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
170pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.3 V @ 8 A
Recovery Time
50 ns
Forward Continuous Current
16 A @ Ta=100C
Max Surge Current
250 A
Reverse Current Ir
10 uA
Power Dissipation
7.81 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FES16GTFS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FES16GT
Manufacturer:
GS
Quantity:
20 000
Company:
Part Number:
FES16GT
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FES16GT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FES16GT-E3/45
Manufacturer:
Vishay Semiconductors
Quantity:
995
Part Number:
FES16GT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
FES16GTR
Manufacturer:
FAIRCHILD
Quantity:
12 500
2001 Fairchild Semiconductor Corporation
Features
•
•
•
•
Low forward voltage drop.
High surge current capacity.
High current capability.
High reliability.
Symbol
Symbol
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
*
Thermal Characteristics
Electrical Characteristics
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
t
I
C
V
I
I
T
T
rr
R
P
R
R
F(AV)
FSM
F
stg
J
T
RRM
D
JA
JL
Forward Voltage @ 8.0A
Reverse Recovery Time
I
Reverse Current @ rated V
Total Capacitance
F
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
Non-repetitive Peak Forward Surge
Current
Storage Temperature Range
Operating Junction Temperature
= 0.5 A, I
V
.375 " lead length @ T
8.3 ms Single Half-Sine-Wave
R
= 4.0. f = 1.0 MHz
T
T
Parameter
A
A
R
= 25 C
= 100 C
Parameter
= 1.0 A, I
Parameter
RR
FES16AT - FES16JT
= 0.25 A
A
R
= 100 C
T
A
= 25°C unless otherwise noted
16AT
T
A
16AT
= 25°C unless otherwise noted
50
TO-220AC
1
16BT
16BT
100
2
0.95
35
16CT
16CT
150
170
16DT
16DT
Device
200
-65 to +150
-65 to +150
Value
500
10
250
16
16FT
Value
16FT
7.81
300
1.2
16
1.3
16GT
16GT
400
50
PIN 1
PIN 3
PIN 1
PIN 3
16HT
16HT
500
Case Negative
Case Positive
Suffix "R"
145
1.5
16JT
FES16AT - FES16JT, Rev. C
16JT
600
CASE
-
+
Units
Units
Units
C/W
C/W
pF
ns
W
V
pF
A
A
V
A
A
V
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FES16GT Summary of contents
Page 1
... Reverse Recovery Time 0 1 Reverse Current @ rated 100 Total Capacitance 4. 1.0 MHz R 2001 Fairchild Semiconductor Corporation 1 2 TO-220AC T = 25°C unless otherwise noted A 16AT 16BT 16CT 16DT 50 100 150 200 = 100 C A -65 to +150 -65 to +150 T = 25°C unless otherwise noted A Device ...
Page 2
... Forward Voltage, V Figure 3. Forward Voltage Characteristics 50 50 NONINDUCTIVE NONINDUCTIVE DUT 50V (approx) 50 NONINDUCTIVE Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation 250 200 150 100 50 0 125 150 175 Figure 2. Non-Repetitive Surge Current 1000 100 10 1 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...