VF20120S-E3/4W Vishay, VF20120S-E3/4W Datasheet

DIODE SCHOTTKY 20A 120V TO220-3

VF20120S-E3/4W

Manufacturer Part Number
VF20120S-E3/4W
Description
DIODE SCHOTTKY 20A 120V TO220-3
Manufacturer
Vishay
Datasheet

Specifications of VF20120S-E3/4W

Voltage - Forward (vf) (max) @ If
1.12V @ 20A
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
20A
Current - Reverse Leakage @ Vr
300µA @ 120V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads, Isolated), ITO-220AB
Product
Schottky Rectifiers
Peak Reverse Voltage
120 V
Forward Continuous Current
20 A
Max Surge Current
200 A
Configuration
Single Dual Anode
Forward Voltage Drop
1.03 V
Maximum Reverse Leakage Current
300 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 88993
Revision: 25-Jun-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T
Peak repetitive reverse current
at t
Voltage rate of change (rated V
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction ans storage temperature range
p
PIN 1
PIN 3
NC
= 2 µs, 1 kHz, T
A
K
V
TO-220AB
TO-263AB
V20120S
VB20120S
F
at I
T
V
I
J
I
F(AV)
FSM
High-Voltage Trench MOS Barrier Schottky Rectifier
RRM
F
max.
= 20 A
HEATSINK
NC
CASE
K
PIN 2
J
A
= 38 °C ± 2 °C
1
2
TMBS
3
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
R
)
A
®
= 25 °C unless otherwise noted)
J
= 25 °C, L = 60 mH
K
PIN 1
PIN 3
PIN 1
PIN 3
TO-262AA
ITO-220AB
VF20120S
VI20120S
Ultra Low V
150 °C
0.73 V
120 V
200 A
20 A
V20120S, VF20120S, VB20120S & VI20120S
PIN 2
PIN 2
K
1
1
New Product
2
2
3
3
SYMBOL
T
F
J
V
I
dV/dt
I
I
, T
F(AV)
E
V
RRM
= 0.50 V at I
FSM
RRM
AS
AC
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky technology
• Low forward voltage drop, low power
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
• Solder bath temperature 275 °C maximum, 10 s,
• Compliant to RoHS directive 2002/95/EC and in
V20120S
losses
maximum peak of 245 °C (for TO-263AB package)
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
accordance to WEEE 2002/96/EC
F
PDD-Europe@vishay.com
TO-220AB,
= 5 A
Vishay General Semiconductor
VF20120S
- 40 to + 150
10 000
1500
120
200
130
0.5
20
ITO-220AB,
VB20120S
VI20120S
TO-263AB
www.vishay.com
UNIT
V/µs
mJ
°C
V
A
A
A
V
and
1

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VF20120S-E3/4W Summary of contents

Page 1

... Operating junction ans storage temperature range Document Number: 88993 For technical questions within your region, please contact one of the following: Revision: 25-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20120S, VF20120S, VB20120S & VI20120S Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...

Page 2

... Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V20120S-E3/4W ITO-220AB VF20120S-E3/4W TO-263AB VB20120S-E3/4W TO-263AB VB20120S-E3/8W TO-262AA VI20120S-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 88993 For technical questions within your region, please contact one of the following: Revision: 25-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20120S, VF20120S, VB20120S & VI20120S 10 1 0.1 1.2 1.4 1.6 0.01 Figure 6. Typical Transient Thermal Impedance ...

Page 4

... V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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