ISL9R8120P2 Fairchild Semiconductor, ISL9R8120P2 Datasheet

ISL9R8120P2

Manufacturer Part Number

ISL9R8120P2

Description

8 AMP 1200V STEALTH DIODE

Manufacturer

Fairchild Semiconductor

Series

Stealth™r

Datasheet

1.ISL9R8120P2.pdf (6 pages)

Specifications of ISL9R8120P2

Voltage - Forward (vf) (max) @ If

3.3V @ 8A

Voltage - Dc Reverse (vr) (max)

1200V (1.2kV)

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

100µA @ 1200V

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

300ns

Mounting Type

Through Hole

Package / Case

TO-220-2, TO-220AC

Product

Ultra Fast Recovery Rectifier

Configuration

Single

Reverse Voltage

1200 V

Forward Voltage Drop

3.3 V

Recovery Time

44 ns

Forward Continuous Current

8 A

Max Surge Current

100 A

Reverse Current Ir

100 uA

Power Dissipation

71 W

Mounting Style

Through Hole

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Repetitive Reverse Voltage Vrrm Max

1.2kV

Forward Current If(av)

Forward Voltage Vf Max

3.3V

Reverse Recovery Time Trr Max

44ns

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

Q1563503

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ISL9R8120P2

Manufacturer:

FAIRCHILD

Quantity:

12 500

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ISL9R8120P2 / ISL9R8120S3S

8A, 1200V Stealth™ Diode

General Description

The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes

optimized for low loss performance in high frequency hard

switched applications. The Stealth™ family exhibits low

reverse recovery current (I

recovery under typical operating conditions.

This device is intended for use as a free wheeling or boost

diode in power supplies and other power switching

applications. The low I

in switching transistors. The soft recovery minimizes ringing,

expanding the range of conditions under which the diode may

be operated without the use of additional snubber circuitry.

Consider using the Stealth™ diode with a 1200V NPT IGBT to

provide the most efficient and highest power density design at

lower cost.

Formerly developmental type TA49413

Device Maximum Ratings

Package

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

Symbol

(BOTTOM SIDE

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

F(AV)

, T

FRM

RWM

FSM

RRM

PKG

AVL

CATHODE

METAL)

STG

Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current (T

Repetitive Peak Surge Current (20kHz Square Wave)

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Power Dissipation

Avalanche Energy (1A, 40mH)

Operating and Storage Temperature Range

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Application Note AN-7528

RM(REC)

JEDEC TO-220AC

RM(REC)

and short t

) and exceptionally soft

phase reduce loss

ANODE

CATHODE

= 25°C unless otherwise noted

Parameter

= 105

Features

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t

• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t

• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

ANODE

N / C

JEDEC TO-263AB

CATHODE

(FLANGE)

-55 to 150

Ratings

ISL9R8120P2 / ISL9R8120S3S Rev. A

1200

100

300

260

Symbol

May 2002

/ t

Units

< 32ns

°C

> 5.5

Related parts for ISL9R8120P2

ISL9R8120P2 Summary of contents

Page 1

... ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft RM(REC) recovery under typical operating conditions. ...

Page 2

... TO-220, TO-263 Tape Width Quantity N/A 50 24mm 800 Min Typ Max T = 25° 100 125° 1 25°C - 2.8 3 125°C - 2.7 3 30V - 30V - 300 - - 4 525 - - 375 - - 5 1 200 - - 5 1 310 - - - 1. ISL9R8120P2 / ISL9R8120S3S Rev. A Units µ µ µC A/µs °C/W °C/W ...

Page 3

... T = 125 16A, 8A 16A, 8A 300 400 500 600 700 800 900 dI /dt, CURRENT RATE OF CHANGE (A/µs) F and t Curves 780V 125 16A 200 300 400 500 600 700 800 dI /dt, CURRENT RATE OF CHANGE (A/µ /dt F ISL9R8120P2 / ISL9R8120S3S Rev 1000 900 1000 ...

Page 4

... Figure 11. DC Current Derating Curve o = 125 200 300 400 500 600 700 800 dI /dt, CURRENT RATE OF CHANGE (A/µ 8A 780V, dI /dt = 200A/µ RM(REC 100 125 CASE TEMPERATURE ( Case Temperature 140 150 ISL9R8120P2 / ISL9R8120S3S Rev 16A = 900 1000 /dt F 500 450 400 350 300 150 ...

Page 5

... DUT CES R(AVL) CURRENT SENSE Q 1 DUT Figure 15. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation - RECTANGULAR PULSE DURATION ( CURRENT 0 SENSE + Figure 14 Figure 16. Avalanche Current and Voltage NOTES: DUTY FACTOR PEAK 0. Waveforms and Definitions rr V AVL Waveforms ISL9R8120P2 / ISL9R8120S3S Rev ...

Page 6

CROSSVOLT â â â â Rev. H5 ...

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