HFA04TB60PBF Vishay, HFA04TB60PBF Datasheet

HFA04TB60PBF

Manufacturer Part Number

HFA04TB60PBF

Description

DIODE HEXFRED 600V 4A TO220AC

Manufacturer

Vishay

Series

HEXFRED®r

Datasheets

1.HFA04TB60PBF.pdf (6 pages)

2.HFA04TB60PBF.pdf (7 pages)

Specifications of HFA04TB60PBF

Diode Type

Standard

Voltage - Forward (vf) (max) @ If

1.8V @ 4A

Voltage - Dc Reverse (vr) (max)

600V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

3µA @ 600V

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

42ns

Mounting Type

Through Hole

Package / Case

TO-220-2 Fused Center, TO-220AC

Repetitive Reverse Voltage Vrrm Max

600V

Forward Current If(av)

Forward Voltage Vf Max

2.2V

Reverse Recovery Time Trr Max

42ns

Forward Surge Current Ifsm Max

25A

Product

Ultra Fast Recovery Rectifier

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

2.2 V at 8 A

Recovery Time

42 ns

Forward Continuous Current

4 A

Max Surge Current

25 A

Reverse Current Ir

3 uA

Mounting Style

Through Hole

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Details

Other names

*HFA04TB60PBF
VS-HFA04TB60PBF
VS-HFA04TB60PBF
VSHFA04TB60PBF
VSHFA04TB60PBF

Current page: 1 of 6
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* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94035

Revision: 28-Jul-08

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

at 4 A at 25 °C

(maximum)

(typical)

(rec)M

F(AV)

/dt

Cathode

TO-220AC

cathode

Base

Ultrafast Soft Recovery Diode, 4 A

Anode

For technical questions, contact: diodes-tech@vishay.com

280 A/µs

150 °C

600 V

40 nC

17 ns

1.8 V

4 A

SYMBOL

HEXFRED

FSM

FRM

, T

Stg

TEST CONDITIONS

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating temperature

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA04TB60 is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 600 V and 4 A continuous current, the HFA04TB60

is especially well suited for use as the companion diode for

IGBTs and MOSFETs. In addition to ultrafast recovery time,

the HEXFRED

peak recovery current (I

tendency to “snap-off” during the

The HEXFRED features combine to offer designers a

rectifier with lower noise and significantly lower switching

losses in both the diode and the switching transistor. These

HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The

HEXFRED HFA04TB60 is ideally suited for applications in

power supplies and power conversion systems (such as

inverters), motor drives, and many other similar applications

where high speed, high efficiency is needed.

= 100 °C

= 25 °C

= 100 °C

RRM

Vishay High Power Products

product line features extremely low values of

- 55 to + 150

VALUES

RRM

600

HFA04TB60PbF

) and does not exhibit any

portion of recovery.

www.vishay.com

UNITS

°C

RoHS*

COMPLIANT

Available

Related parts for HFA04TB60PBF

HFA04TB60PBF Summary of contents

Page 1

... 100 ° FSM I FRM ° 100 ° Stg For technical questions, contact: diodes-tech@vishay.com HFA04TB60PbF Vishay High Power Products RRM rr ® product line features extremely low values of ) and does not exhibit any RRM t portion of recovery. b VALUES UNITS 600 150 °C www.vishay.com Available ...

Page 2

... HFA04TB60PbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER SYMBOL Cathode to anode V BR breakdown voltage Maximum forward voltage V FM Maximum reverse I RM leakage current Junction capacitance C Series inductance L DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL t rr Reverse recovery time t rr1 See fig and 16 t rr2 ...

Page 3

... Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.0001 0.001 t - Rectangular Pulse Duration (s) 1 Fig Maximum Thermal Impedance Z For technical questions, contact: diodes-tech@vishay.com HFA04TB60PbF Vishay High Power Products 1000 T = 150 °C J 100 T = 125 ° °C J 0.1 ...

Page 4

... HFA04TB60PbF Vishay High Power Products 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Recovery Current vs. dI www.vishay.com 4 ® HEXFRED Ultrafast Soft Recovery Diode 1000 /dt F 1000 /dt F For technical questions, contact: diodes-tech@vishay.com ...

Page 5

... I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay.com HFA04TB60PbF Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM rr t ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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