HFA06TB120 Vishay, HFA06TB120 Datasheet

HFA06TB120

Manufacturer Part Number

HFA06TB120

Description

DIODE HEXFRED 1200V 6A TO-220AC

Manufacturer

Vishay

Series

HEXFRED®r

Datasheet

1.HFA06TB120.pdf (7 pages)

Specifications of HFA06TB120

Voltage - Forward (vf) (max) @ If

3V @ 6A

Voltage - Dc Reverse (vr) (max)

1200V (1.2kV)

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

5µA @ 1200V

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

80ns

Mounting Type

Through Hole

Package / Case

TO-220-2 Fused Center, TO-220AC

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Capacitance @ Vr, F

Other names

*HFA06TB120
Q803550B
VS-HFA06TB120
VS-HFA06TB120
VSHFA06TB120
VSHFA06TB120

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

HFA06TB120

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HFA06TB120PBF

Manufacturer:

Quantity:

9 000

Current page: 1 of 7
Download datasheet (116Kb)

Document Number: 93035

Revision: 29-Jul-08

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

(rec)M

/dt (typical) at 125 °C

at 6 A at 25 °C

RRM

(maximum)

(typical)

F(AV)

(typical)

Cathode

TO-220AC

cathode

Base

Ultrafast Soft Recovery Diode, 6 A

Anode

For technical questions, contact: diodes-tech@vishay.com

100 A/µs

1200 V

116 nC

150 °C

26 ns

3.0 V

4.4 A

6 A

SYMBOL

HEXFRED

FSM

FRM

, T

Stg

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA06TB120 is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 1200 V and 6 A continuous current, the

HFA06TB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

extremely low values of peak recovery current (I

does not exhibit any tendency to “snap-off” during the

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA06TB120 is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

TEST CONDITIONS

= 100 °C

= 25 °C

= 100 °C

portion of recovery. The HEXFRED features combine to

RRM

Vishay High Power Products

- 55 to + 150

VALUES

1200

62.5

HFA06TB120

product line features

www.vishay.com

UNITS

°C

RRM

) and

Related parts for HFA06TB120

HFA06TB120 Summary of contents

Page 1

... Higher frequency operation • Reduced snubbing • Reduced parts count 3 DESCRIPTION HFA06TB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ...

Page 2

... MIN. TYP. MAX 130 - 4.4 8.0 - 5.0 9.0 - 116 320 - 233 585 - 180 - 100 MIN. TYP. MAX 300 - - 2 0.5 - 2.0 - 0.07 6 (5.0) (10) HFA06TB120 Document Number: 93035 Revision: 29-Jul-08 UNITS - V µ UNITS - A/µs - UNITS °C K oz. kgf · cm (lbf · in) ...

Page 3

... V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.001 0.01 0 Rectangular Pulse Duration (s) 1 thJC For technical questions, contact: diodes-tech@vishay.com HFA06TB120 Vishay High Power Products 1000 T = 150 °C J 100 T = 125 ° 100 ° 0 °C J 0.01 ...

Page 4

... HFA06TB120 Vishay High Power Products 110 100 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Recovery Current vs. dI www.vishay.com 4 ® HEXFRED Ultrafast Soft Recovery Diode 1000 /dt F 1000 ...

Page 5

... F ( area under curve defined and I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions For technical questions, contact: diodes-tech@vishay.com HFA06TB120 Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM ...

Page 6

... HFA06TB120 Vishay High Power Products ORDERING INFORMATION TABLE Device code Dimensions Part marking information www.vishay.com 6 ® HEXFRED Ultrafast Soft Recovery Diode 120 ® HEXFRED family 2 - Process designator subs. elec. irrad subs. platinum 3 - Current rating ( Package outline (TB = TO-220 2 lead Voltage rating (120 = 1200 V) ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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