Silicon Rectifier Diodes, 12 A
DO-203AA (DO-4)
PRODUCT SUMMARY
I
F(AV)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
T
C
50 Hz
I
FSM
60 Hz
50 Hz
2
I
t
60 Hz
T
C
V
Range
RRM
Note
(1)
JEDEC registered values
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
REPETITIVE PEAK
(2)
TYPE NUMBER
REVERSE VOLTAGE
V
T
= - 65 °C TO 200 °C
C
(1)
1N1199A
50
(1)
1N1200A
100
(1)
1N1201A
150
(1)
1N1202A
200
(1)
1N1203A
300
(1)
1N1204A
400
(1)
1N1205A
500
(1)
1N1206A
600
(1)
1N3670A
700
(1)
1N3671A
800
(1)
1N3672A
900
(1)
1N3673A
1000
Notes
(1)
JEDEC registered values
(2)
Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
Document Number: 93493
Revision: 24-Jun-08
Medium Power
FEATURES
• Voltage ratings from 50 to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
• RoHS compliant
12 A
TEST CONDITIONS
- 65 to 200
50 to 1000
V
, MAXIMUM RMS
R(RMS)
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
T
= - 65 °C TO 200 °C
T
C
(1)
35
(1)
70
(1)
105
(1)
140
(1)
210
(1)
280
(1)
350
(1)
420
490
560
630
700
For technical questions, contact: ind-modules@vishay.com
1N1...A, 1N36..A Series
Vishay High Power Products
VALUES
UNITS
(1)
12
A
(1)
150
°C
230
A
(1)
240
260
2
A
s
240
°C
(1)
V
V
, MAXIMUM
RSM
V
, MAXIMUM DIRECT
RM
REVERSE VOLTAGE
REVERSE VOLTAGE
V
V
= - 65 °C TO 200 °C
T
= - 65 °C TO 200 °C
C
C
(1)
100
50
(1)
200
100
(1)
300
150
(1)
350
200
(1)
450
300
(1)
600
400
(1)
700
500
(1)
800
600
(1)
900
700
(1)
1000
800
(1)
1100
900
(1)
1200
1000
RoHS
COMPLIANT
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
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