DIODE FAST REC 100V 40A DO-5

40HFL10S02

Manufacturer Part Number40HFL10S02
DescriptionDIODE FAST REC 100V 40A DO-5
ManufacturerVishay
40HFL10S02 datasheet
 


Specifications of 40HFL10S02

Diode TypeStandardVoltage - Forward (vf) (max) @ If1.95V @ 40A
Voltage - Dc Reverse (vr) (max)100VCurrent - Average Rectified (io)40A
Current - Reverse Leakage @ Vr100µA @ 100VSpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)200nsMounting TypeChassis, Stud Mount
Package / CaseDO-203AB, DO-5, StudProductFast Recovery Rectifier
ConfigurationSingleReverse Voltage100 V
Forward Voltage Drop1.95 VRecovery Time200 ns
Forward Continuous Current40 AMax Surge Current420 A
Reverse Current Ir100 uAMounting StyleStud
Maximum Operating Temperature+ 125 CMinimum Operating Temperature- 40 C
Repetitive Reverse Voltage Vrrm Max100VForward Current If(av)40A
Forward Voltage Vf Max1.95VReverse Recovery Time Trr Max200ns
Forward Surge Current Ifsm Max420ALead Free Status / RoHS StatusLead free / RoHS Compliant
Capacitance @ Vr, F-Other names*40HFL10S02
VS-40HFL10S02
VS-40HFL10S02
VS40HFL10S02
VS40HFL10S02
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FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-repetitive forward current
2
Maximum I
t for fusing
√t for fusing
2
(1)
Maximum I
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
Note
√t • √t
(1)
2
2
I
t for time t
= I
x
x
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
T
= 25 °C, I
J
- dI
/dt = 100 A/µs
Typical reverse
F
t
rr
recovery time
T
= 25 °C, - dI
J
= π x rated I
I
FM
T
= 25 °C, I
J
- dI
/dt = 100 A/µs
Typical reverse
F
Q
rr
recovered charge
T
= 25 °C, - dI
J
= π x rated I
I
FM
Document Number: 93150
Revision: 25-May-09
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
SYMBOL
TEST CONDITIONS
I
180° conduction, half sine wave
F(AV)
I
F(RMS)
I
Sinusoidal half wave, 30° conduction
FRM
Sinusoidal half wave, 100
t = 10 ms
% V
RRM
t = 8.3 ms
initial T
J
I
FSM
Sinusoidal half wave,
t = 10 ms
no voltage reapplied,
t = 8.3 ms
initial T
J
t = 10 ms
100 % V
RRM
initial T
t = 8.3 ms
J
2
I
t
t = 10 ms
No voltage reapplied,
initial T
t = 8.3 ms
J
√t
2
I
t = 0.1 ms to 10 ms, no voltage reapplied
V
F(TO)
T
= 125 °C
J
r
F
= π x I
V
T
= 25 °C, I
FM
J
FM
F(AV)
40HFL...
S02
S05
= 1 A to V
= 30 V,
F
R
70
180
/dt = 25 A/µs,
F
200
500
1000
F(AV)
= 1 A to V
= 30 V,
F
R
160
750
3100
/dt = 25 A/µs,
F
240
1300 6000
F(AV)
For technical questions, contact:
ind-modules@vishay.com
Vishay High Power Products
40HFL
70HFL
85HFL
70
40
75
63
110
134
220
380
470
400
700
1100
reapplied,
420
730
1151
= T
maximum
J
475
830
1308
500
870
1369
= T
maximum
J
800
2450
6050
reapplied,
= T
maximum
730
2240
5523
J
1130
3460
8556
= T
maximum
1030
3160
7810
J
11 300
34 650
85 560
1.081
1.085
1.128
6.33
3.40
2.11
1.95
1.85
1.75
70HFL...
85HFL...
S10
S02
S05
S10
S02
S05
350
60
150
290
50
120
200
500
1000
200
500
90
500
1600
70
340
240
1300 6000
240
1300 6000
UNITS
A
85
°C
A
A
A
2
A
s
√s
2
A
V
V
UNITS
S10
270
ns
1000
1350
nC
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