BAS116,235 NXP Semiconductors, BAS116,235 Datasheet - Page 2

• Manufacturer Part Number: BAS116,235
• Description: DIODE SW EPITAXIAL MED-SPD SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAS116,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032170235; BAS116 /T3; BAS116 /T3

NXP Semiconductors
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATION
• Low leakage current applications in surface mounted
DESCRIPTION
Epitaxial medium-speed switching diode with a low
leakage current in a small SOT23 plastic SMD package.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
BAS116
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
circuits.
stg
j
RRM
R
tot
Low-leakage diode
TYPE NUMBER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
NAME
−
plastic surface mounted package; 3 leads
see Fig.2; note 1
square wave; T
see Fig.4
T
amb
t
t
t
p
p
p
= 1 µs
= 1 ms
= 1 s
2
= 25 °C; note 1
lumns
PINNING
DESCRIPTION
Fig.1
Marking code:
JVp = made in Hong Kong;
Top view
PACKAGE
CONDITIONS
j
= 25 °C prior to surge;
2
Simplified outline (SOT23) and symbol.
PIN
1
2
3
3
1
JVt = made in Malaysia;
JVW = Made in China.
anode
not connected
cathode
n.c.
−
−
−
−
−
−
−
−
−65
−
2
MIN.
DESCRIPTION
Product data sheet
VERSION
SOT23
BAS116
85
75
215
500
4
1
0.5
250
+150
150
MAX.
3
MAM106
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT
1