BAS116,235 NXP Semiconductors, BAS116,235 Datasheet - Page 8

• Manufacturer Part Number: BAS116,235
• Description: DIODE SW EPITAXIAL MED-SPD SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAS116,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032170235; BAS116 /T3; BAS116 /T3

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]
R76/04/pp8
Date of release: 2003 Dec 12
Document order number: 9397 750 12391