BAS116,215 NXP Semiconductors, BAS116,215 Datasheet - Page 3

• Manufacturer Part Number: BAS116,215
• Description: DIODE SW EPITAXIAL MED-SPD SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAS116,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 215mA (DC)
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934032170215::BAS116 T/R::BAS116 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
Low-leakage diode
d
th(j-tp)
th(j-a)
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
R
L
I
I
I
I
V
V
F
F
F
F
= 100 Ω; measured at I
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 75 V
= 75 V; T
R
= 0; see Fig.6
j
note 1
3
= 150 °C
CONDITIONS
F
CONDITIONS
= 10 mA to I
R
= 1 mA; see Fig.7
R
= 10 mA;
VALUE
330
500
−
−
−
−
0.003 5
3
2
0.8
TYP.
Product data sheet
BAS116
0.9
1
1 .1
1. 25
80
−
3
MAX. UNIT
UNIT
K/W
K/W
V
V
V
V
nA
nA
pF
µs