BAS116,215 NXP Semiconductors, BAS116,215 Datasheet - Page 5

• Manufacturer Part Number: BAS116,215
• Description: DIODE SW EPITAXIAL MED-SPD SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAS116,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 215mA (DC)
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934032170215::BAS116 T/R::BAS116 T/R

NXP Semiconductors
2003 Dec 12
handbook, full pagewidth
Low-leakage diode
(1) Maximum values.
(2) Typical values.
V
Fig.5
(1) I
R
V = V
= 75 V.
(nA)
I
10
10
10
R
R
10
R = 50
10
= 1 mA.
−1
−2
−3
S
1
R
2
Reverse current as a function of junction
temperature.
0
I x R
F
Ω
S
(1)
(2)
50
I F
100
D.U.T.
Fig.7 Reverse recovery time test circuit and waveforms.
150
OSCILLOSCOPE
T
SAMPLING
R = 50
j
MGA881
(°C)
i
mlb754
200
Ω
V R
5
handbook, halfpage
10%
t r
f = 1 MHz; T
Fig.6
90%
(pF)
C d
input signal
2
1
0
0
t p
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
5
t
10
I F
output signal
15
Product data sheet
V R (V)
t rr
BAS116
MBG526
20
(1)
t