BAS116,215 NXP Semiconductors, BAS116,215 Datasheet - Page 6

DIODE SW EPITAXIAL MED-SPD SOT23

BAS116,215

Manufacturer Part Number
BAS116,215
Description
DIODE SW EPITAXIAL MED-SPD SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS116,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
3µs
Current - Reverse Leakage @ Vr
5nA @ 75V
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Current - Average Rectified (io)
215mA (DC)
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934032170215::BAS116 T/R::BAS116 T/R
NXP Semiconductors
PACKAGE OUTLINE
2003 Dec 12
Low-leakage diode
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
6
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
X
Product data sheet
v
ISSUE DATE
M
04-11-04
06-03-16
BAS116
A
SOT23

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