BAS21W,115 NXP Semiconductors, BAS21W,115 Datasheet

DIODE SW 200V 200MA HS UMT3

BAS21W,115

Manufacturer Part Number
BAS21W,115
Description
DIODE SW 200V 200MA HS UMT3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS21W,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
250V
Current - Average Rectified (io)
225mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
225 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
200 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063268115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
High-voltage switching diodes, encapsulated in a very small Surface-Mounted
Device (SMD) plastic package.
Table 1.
I
I
I
I
I
Table 2.
[1]
[2]
Type number
BAS21W
BAS21AW
BAS21SW
Symbol
Per diode
I
I
V
t
F
R
rr
R
BAS21W series
High-voltage switching diodes
Rev. 01 — 9 October 2009
High switching speed: t
Low leakage current
High reverse voltage: V
High-speed switching
General-purpose switching
Single diode loaded.
When switched from I
Product overview
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
Configuration
single
dual common anode
dual series
F
= 10 mA to I
rr
R
50 ns
250 V
R
= 10 mA; R
Conditions
V
R
= 200 V
Package
NXP
SOT323
L
= 100 ; measured at I
I
I
I
I
I
Low capacitance: C
Very small SMD plastic package
AEC-Q101 qualified
Voltage clamping
Reverse polarity protection
[1]
[2]
JEDEC
SC-70
Min
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
Product data sheet
d
Package
configuration
very small
2 pF
Max
225
100
250
50
Unit
mA
nA
V
ns

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BAS21W,115 Summary of contents

Page 1

BAS21W series High-voltage switching diodes Rev. 01 — 9 October 2009 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Type number BAS21W BAS21AW BAS21SW 1.2 Features I ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin BAS21W BAS21AW BAS21SW Ordering information Table 4. Type number BAS21W BAS21AW BAS21SW BAS21W_SER_1 Product data sheet Pinning Description anode not connected cathode cathode (diode 1) cathode (diode 2) common anode anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) ...

Page 3

... NXP Semiconductors 4. Marking Table 5. Type number BAS21W BAS21AW BAS21SW [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode FRM I FSM Per device P tot amb ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per device R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table unless otherwise specified. amb Symbol Per diode [1] When switched from I BAS21W_SER_1 Product data sheet Thermal characteristics Parameter ...

Page 5

... NXP Semiconductors 600 I F (mA) 400 200 ( 0.4 0.8 ( 150 C amb ( amb ( amb ( amb Fig 1. Forward current as a function of forward voltage; typical values ( 150 C amb ( amb ( amb ( amb Fig 3. Reverse current as a function of reverse voltage; typical values BAS21W_SER_1 Product data sheet 006aab212 ...

Page 6

... NXP Semiconductors 1 (pF) 0.8 0.6 0.4 0 MHz amb Fig 4. Diode capacitance as a function of reverse voltage; typical values 8. Test information D.U. ( Fig 6. Reverse recovery time test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualifi ...

Page 7

... NXP Semiconductors 9. Package outline Fig 7. 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number BAS21W BAS21AW BAS21SW [1] For further information and the availability of packing methods, see BAS21W_SER_1 Product data sheet 2.2 1.8 2 ...

Page 8

... NXP Semiconductors 11. Soldering Fig 8. 3.65 2.1 Fig 9. BAS21W_SER_1 Product data sheet 2.65 1.85 1.325 2 0 Reflow soldering footprint SOT323 (SC-70) 4.6 2.575 1.425 (3 ) Wave soldering footprint SOT323 (SC-70) Rev. 01 — 9 October 2009 BAS21W series High-voltage switching diodes solder lands ...

Page 9

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date BAS21W_SER_1 20091009 BAS21W_SER_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 9 October 2009 BAS21W series High-voltage switching diodes Supersedes - © NXP B.V. 2009. All rights reserved. ...

Page 10

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 Packing information Soldering ...

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