BAS116H,115 NXP Semiconductors, BAS116H,115 Datasheet - Page 2

DIODE SWITCH 75V 215MA SOD-123

BAS116H,115

Manufacturer Part Number
BAS116H,115
Description
DIODE SWITCH 75V 215MA SOD-123
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS116H,115

Package / Case
SOD-123 Flat Leads
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
215mA (DC)
Current - Reverse Leakage @ Vr
5nA @ 75V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
3µs
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
75 V
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
3 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059308115
BAS116H T/R
BAS116H T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS116H,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
BAS116H_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Pin
1
2
Type number
BAS116H
Type number
BAS116H
Symbol
Per diode
V
V
I
I
I
P
T
T
T
F
FRM
FSM
j
amb
stg
RRM
R
tot
The marking bar indicates the cathode.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Pinning
Ordering information
Marking codes
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Description
cathode
anode
Package
Name
-
Rev. 02 — 14 December 2009
plastic surface mounted package; 2 leads
Description
75 V, low leakage diode in small SOD123F package
Conditions
t
t
t
T
p
p
p
amb
= 1 μs
= 1 ms
= 1 s
≤ 25 °C
Marking code
B1
[1]
Simplified outline
1
[1]
-
Min
-
-
-
-
-
-
-
-
−65
−65
2
BAS116H
Symbol
© NXP B.V. 2010. All rights reserved.
Max
85
75
215
500
4
1
0.5
375
150
+150
+150
1
sym001
Version
SOD123F
Unit
V
V
mA
mA
A
A
A
mW
°C
°C
°C
2
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