BAS116H,115 NXP Semiconductors, BAS116H,115 Datasheet - Page 3

• Manufacturer Part Number: BAS116H,115
• Description: DIODE SWITCH 75V 215MA SOD-123
• Manufacturer: NXP Semiconductors

Specifications of BAS116H,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 3 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059308115; BAS116H T/R; BAS116H T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS116H_2
Product data sheet
Table 6.
[1]
[2]
Table 7.
T
[1]
[2]
Symbol
R
R
Symbol
Per diode
V
I
C
t
R
rr
amb
F
th(j-a)
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Pulse test: t
When switched from I
= 25
°
C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery
time
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 14 December 2009
F
= 10 mA to I
V
Conditions
I
I
I
I
V
V
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 75 V
= 75 V; T
= 0 V; f = 1 MHz
= 10 mA; R
75 V, low leakage diode in small SOD123F package
Conditions
in free air
j
= 150 °C
L
= 100 Ω; measured at I
[1][2]
[1]
[1]
[1]
[1]
[2]
Min
-
-
Min
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
Typ
-
-
-
-
0.003 5.0
3
2
0.8
BAS116H
© NXP B.V. 2010. All rights reserved.
Max
0.90
1.00
1.10
1.25
80.0
-
3.0
Max
330
70
Unit
K/W
K/W
Unit
mV
mV
mV
mV
nA
nA
pF
μs
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