BAS116H,115 NXP Semiconductors, BAS116H,115 Datasheet - Page 4

• Manufacturer Part Number: BAS116H,115
• Description: DIODE SWITCH 75V 215MA SOD-123
• Manufacturer: NXP Semiconductors

Specifications of BAS116H,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 3 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059308115; BAS116H T/R; BAS116H T/R

NXP Semiconductors
BAS116H_2
Product data sheet
Fig 1.
Fig 3.
(mA)
(nA)
(1) T
(2) T
(3) T
(1) Maximum values
(2) Typical values
I
10
10
10
I
R
F
300
200
100
10
10
−1
−2
−3
1
0
2
Forward current as a function of forward
voltage
V
Reverse current as a function of junction
temperature
0
0
amb
amb
amb
R
= 75 V
= 150 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
(1)
(2)
0.4
50
100
0.8
(1)
(2)
150
1.2
T
V
(3)
j
F
(°C)
mlb752
(V)
mlb754
Rev. 02 — 14 December 2009
200
1.6
Fig 2.
Fig 4.
75 V, low leakage diode in small SOD123F package
I
FSM
(A)
(pF)
10
C
10
10
d
−1
1
2
1
0
2
1
Based on square wave currents
T
Non-repetitive peak forward current as a
function of pulse duration
0
T
Diode capacitance as a function of reverse
voltage; typical values
j
amb
= 25 °C; prior to surge
= 25 °C; f = 1 MHz
10
5
10
10
2
10
BAS116H
15
© NXP B.V. 2010. All rights reserved.
3
t
V
p
R
(μs)
mbg526
mbg704
(V)
10
20
4
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