BAS116H,115 NXP Semiconductors, BAS116H,115 Datasheet - Page 5

• Manufacturer Part Number: BAS116H,115
• Description: DIODE SWITCH 75V 215MA SOD-123
• Manufacturer: NXP Semiconductors

Specifications of BAS116H,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 3 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059308115; BAS116H T/R; BAS116H T/R

NXP Semiconductors
8. Test information
BAS116H_2
Product data sheet
Fig 5.
(1) I
V = V
R
S
Reverse recovery time test circuit and waveforms
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
I
F
D.U.T.
OSCILLOSCOPE
mga881
SAMPLING
R
i
= 50
Rev. 02 — 14 December 2009
Ω
V
R
75 V, low leakage diode in small SOD123F package
t
10 %
r
90 %
input signal
t
p
t
+ I
F
output signal
BAS116H
© NXP B.V. 2010. All rights reserved.
t rr
(1)
t
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