BAS116T,115 NXP Semiconductors, BAS116T,115 Datasheet

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BAS116T,115

Manufacturer Part Number
BAS116T,115
Description
DIODE SW SGL LOW LEAK SOT416
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BAS116T,115

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
215mA (DC)
Current - Reverse Leakage @ Vr
5nA @ 75V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
3µs
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
EMT3 (SOT-416, SC-75-3)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934063959115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Single low leakage current switching diode, encapsulated in a SOT416 (SC-75)
ultra small Surface-Mounted Device (SMD) plastic package.
Table 1.
[1]
[2]
Symbol
I
I
V
t
F
R
rr
R
BAS116T
Single low leakage current switching diode
Rev. 01 — 14 December 2009
High switching speed: t
Low leakage current: 3 pA
Repetitive peak reverse voltage:
V
AEC-Q101 qualified
Low leakage current applications
General-purpose switching
Pulse test: t
When switched from I
RRM
≤ 85 V
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
p
≤ 300 μs; δ ≤ 0.02.
F
= 10 mA to I
rr
= 0.8 μs
R
= 10 mA; R
Conditions
V
R
= 75 V
L
= 100 Ω; measured at I
Low capacitance: C
Reverse voltage: V
Ultra small SMD plastic package
Voltage clamping
Reverse polarity protection
[1]
[2]
Min
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
Product data sheet
R
d
≤ 75 V
= 2 pF
Max
215
5
75
3
Unit
mA
nA
V
μs

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BAS116T,115 Summary of contents

Page 1

BAS116T Single low leakage current switching diode Rev. 01 — 14 December 2009 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in a SOT416 (SC-75) ultra small Surface-Mounted Device (SMD) plastic package. 1.2 Features High ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number Package BAS116T 4. Marking Table 4. Type number BAS116T 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V RRM FRM I FSM BAS116T_1 Product data sheet Pinning Description ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P tot amb T stg [1] Pulse test °C prior to surge. [ [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint ...

Page 4

... NXP Semiconductors 300 I F (mA) 200 100 0 0 100 FR4 PCB, standard footprint Fig 1. Forward current as a function of ambient temperature; derating curve Based on square wave currents °C; prior to surge T j Fig 3. Non-repetitive peak forward current as a function of pulse duration; maximum values BAS116T_1 ...

Page 5

... NXP Semiconductors (nA) 10 (1) 1 −1 10 (2) −2 10 − 100 (1) Maximum values (2) Typical values Fig 4. Reverse current as a function of junction temperature BAS116T_1 Product data sheet Single low leakage current switching diode mlb754 (pF 150 200 T (° MHz; T Fig 5. Diode capacitance as a function of reverse voltage ...

Page 6

... NXP Semiconductors 8. Test information D.U.T. I Ω × ( 1mA R Fig 6. Reverse recovery time test circuit and waveforms 9. Package outline Fig 7. Package outline SOT416 (SC-75) BAS116T_1 Product data sheet Single low leakage current switching diode SAMPLING OSCILLOSCOPE Ω mga881 input signal 1.8 1 ...

Page 7

... NXP Semiconductors 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description BAS116T [1] For further information and the availability of packing methods, see 11. Soldering Fig 8. Reflow soldering footprint SOT416 (SC-75) BAS116T_1 Product data sheet ...

Page 8

... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date BAS116T_1 20091214 BAS116T_1 Product data sheet Single low leakage current switching diode Data sheet status Change notice Product data sheet - Rev. 01 — 14 December 2009 BAS116T Supersedes - © NXP B.V. 2009. All rights reserved. ...

Page 9

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 10

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 Packing information . . . . . . . . . . . . . . . . . . . . . 7 11 Soldering ...

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