BAS29,215 NXP Semiconductors, BAS29,215 Datasheet - Page 6

• Manufacturer Part Number: BAS29,215
• Description: DIODE SW 110V 250MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS29,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 90V
• Voltage - Forward (vf) (max) @ If: 1V @ 200mA
• Voltage - Dc Reverse (vr) (max): 90V
• Capacitance @ Vr, F: 35pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: General Purpose Diodes
• Peak Reverse Voltage: 110 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 10 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933723180215::BAS29 T/R::BAS29 T/R

NXP Semiconductors
2003 Mar 20
handbook, full pagewidth
handbook, halfpage
General purpose controlled avalanche
(double) diodes
(1) V
(2) V
Fig.5
(1) I
(µA)
10
10
V = V
10
I R
R
10
−1
−2
R
R
R = 50
2
1
= 3 mA.
S
= 90 V; maximum values.
= 90 V; typical values.
0
R
Reverse current as a function of junction
temperature.
I x R
F
Ω
S
(1)
100
(2)
I F
Fig.7 Reverse recovery voltage test circuit and waveforms.
D.U.T.
T j (
o
C)
OSCILLOSCOPE
SAMPLING
MBH282
R = 50
MGA881
i
200
Ω
V R
6
handbook, halfpage
10%
t r
f = 1 MHz; T
Fig.6
90%
(pF)
C d
input signal
40
30
20
10
0
0
t p
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
BAS29; BAS31; BAS35
10
t
I F
20
output signal
Product data sheet
V R (V)
t rr
MGD003
30
(1)
t